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Toshiba.co.jp/ST200M21
{"@I(C) (A) (Test Condition)":"200","Absolute Max. Power Diss. (W)":"1.2k","I(C) Abs.(A) Collector Current":"200","Semiconductor Material":"Silicon","t(s) Max. (s) Storage time.":"20u","h(FE) Min. Static Current Gain":"80","@V(CE) (V) (Test Condition)":"5.0","f(T) Min. (Hz) Transition Freq":"100k","t(on) Max. (s) Turn-On Time":"2.0u","V(BR)CEO (V)":"900","Package":"Disc-60","V(BR)CBO (V)":"1.2k","Military":"N","t(f) Max. (s) Fall time.":"4.0u"}...
914 Bytes - 01:48:24, 24 May 2025
Documentation and Support
Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:
| File Name | File Size (MB) | Document | MOQ | Support |
|---|---|---|---|---|
| ST200MTR_UL_BROCHURE_EN_PDF.pdf | 12.08 | 1 | Request |
