K1S1616B1M-EI85 1M X 16 STANDARD SRAM, 85 ns, PBGA48
From Samsung Semiconductor Division
Status | ACTIVE |
Access Time-Max (tACC) | 85 ns |
Memory Density | 1.68E7 deg |
Memory IC Type | PSEUDO STATIC RAM |
Memory Width | 16 |
Mfr Package Description | 7 X 6 MM, 0.75 MM PITCH, BGA-48 |
Number of Functions | 1 |
Number of Terminals | 48 |
Number of Words | 1.05E6 words |
Number of Words Code | 1M |
Operating Mode | ASYNCHRONOUS |
Operating Temperature-Max | 85 Cel |
Operating Temperature-Min | -40 Cel |
Organization | 1M X 16 |
Package Body Material | PLASTIC/EPOXY |
Package Shape | RECTANGULAR |
Package Style | GRID ARRAY, VERY THIN PROFILE, FINE PITCH |
Parallel/Serial | PARALLEL |
Supply Voltage-Max (Vsup) | 2.2 V |
Supply Voltage-Min (Vsup) | 1.7 V |
Supply Voltage-Nom (Vsup) | 1.8 V |
Surface Mount | Yes |
Technology | CMOS |
Temperature Grade | INDUSTRIAL |
Terminal Finish | TIN LEAD |
Terminal Form | BALL |
Terminal Pitch | 0.7500 mm |
Terminal Position | BOTTOM |