K3P4U1000E-GC12
512K X 16 MASK PROM, 120 ns, PDSO44

From Samsung Semiconductor Division

StatusACTIVE
Access Time-Max (tACC)120 ns
Alternate Memory Width8
Memory Density8.39E6 deg
Memory IC TypeMASK PROM
Memory Width16
Mfr Package Description0.600 INCH, SOP-44
Number of Functions1
Number of Terminals44
Number of Words524288 words
Number of Words Code512K
Operating ModeASYNCHRONOUS
Operating Temperature-Max70 Cel
Operating Temperature-Min0.0 Cel
Organization512K X 16
Package Body MaterialPLASTIC/EPOXY
Package ShapeRECTANGULAR
Package StyleSMALL OUTLINE
Parallel/SerialPARALLEL
Supply Voltage-Max (Vsup)3.3 V
Supply Voltage-Min (Vsup)2.7 V
Supply Voltage-Nom (Vsup)3 V
Surface MountYes
TechnologyCMOS
Temperature GradeCOMMERCIAL
Terminal FinishTIN LEAD
Terminal FormGULL WING
Terminal Pitch1.27 mm
Terminal PositionDUAL

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