2N6661CSM4-JQR-AG4 0.9 A, 90 V, 5.3 ohm, N-CHANNEL, Si, POWER, MOSFET, MO-041BA
From Semelab Plc.
Status | ACTIVE |
Channel Type | N-CHANNEL |
China RoHS Compliant | Yes |
Configuration | SINGLE |
DS Breakdown Voltage-Min | 90 V |
Drain Current-Max (ID) | 0.9000 A |
Drain-source On Resistance-Max | 5.3 ohm |
EU RoHS Compliant | Yes |
FET Technology | METAL-OXIDE SEMICONDUCTOR |
Lead Free | Yes |
Mfr Package Description | LCC3-4 |
Number of Elements | 1 |
Number of Terminals | 4 |
Operating Mode | ENHANCEMENT |
Package Body Material | CERAMIC, METAL-SEALED COFIRED |
Package Shape | RECTANGULAR |
Package Style | SMALL OUTLINE |
Pulsed Drain Current-Max (IDM) | 3 A |
Surface Mount | Yes |
Terminal Finish | GOLD |
Terminal Form | NO LEAD |
Terminal Position | DUAL |
Transistor Application | SWITCHING |
Transistor Element Material | SILICON |
Transistor Type | GENERAL PURPOSE POWER |