2N6661M1A 1 A, 90 V, 4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-257AA
From Semelab Plc.
| Status | ACTIVE |
| Case Connection | ISOLATED |
| Channel Type | N-CHANNEL |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min | 90 V |
| Drain Current-Max (ID) | 1 A |
| Drain-source On Resistance-Max | 4 ohm |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Mfr Package Description | HERMETIC SEALED, METAL PACKAGE-3 |
| Number of Elements | 1 |
| Number of Terminals | 3 |
| Operating Mode | ENHANCEMENT |
| Package Body Material | METAL |
| Package Shape | RECTANGULAR |
| Package Style | FLANGE MOUNT |
| Pulsed Drain Current-Max (IDM) | 3 A |
| Terminal Finish | NOT SPECIFIED |
| Terminal Form | PIN/PEG |
| Terminal Position | SINGLE |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
| Transistor Type | GENERAL PURPOSE POWER |
