2N6784LCC4-JQR-B 2.25 A, 200 V, 1.725 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF
From Semelab Plc.
Status | ACTIVE |
Case Connection | DRAIN |
Channel Type | N-CHANNEL |
Configuration | SINGLE |
DS Breakdown Voltage-Min | 200 V |
Drain Current-Max (ID) | 2.25 A |
Drain-source On Resistance-Max | 1.72 ohm |
FET Technology | METAL-OXIDE SEMICONDUCTOR |
Mfr Package Description | HERMETIC SEALED, METAL, TO-39, 3 PIN |
Number of Elements | 1 |
Number of Terminals | 3 |
Operating Mode | ENHANCEMENT |
Package Body Material | METAL |
Package Shape | ROUND |
Package Style | CYLINDRICAL |
Pulsed Drain Current-Max (IDM) | 9 A |
Terminal Finish | NOT SPECIFIED |
Terminal Form | WIRE |
Terminal Position | BOTTOM |
Transistor Application | SWITCHING |
Transistor Element Material | SILICON |
Transistor Type | GENERAL PURPOSE POWER |