2N6800LCC4 3 A, 400 V, 1 ohm, N-CHANNEL, Si, POWER, MOSFET
From Semelab Plc.
| Status | ACTIVE |
| Case Connection | SOURCE |
| Channel Type | N-CHANNEL |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min | 400 V |
| Drain Current-Max (ID) | 3 A |
| Drain-source On Resistance-Max | 1 ohm |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Mfr Package Description | HERMETIC SEALED, CERAMIC, LCC4-18 |
| Number of Elements | 1 |
| Number of Terminals | 18 |
| Operating Mode | ENHANCEMENT |
| Package Body Material | CERAMIC, METAL-SEALED COFIRED |
| Package Shape | RECTANGULAR |
| Package Style | CHIP CARRIER |
| Pulsed Drain Current-Max (IDM) | 12 A |
| Surface Mount | Yes |
| Terminal Form | NO LEAD |
| Terminal Position | QUAD |
| Transistor Element Material | SILICON |
| Transistor Type | GENERAL PURPOSE POWER |
