2N6661CSM4-JQRG4
0.9 A, 90 V, 5.3 ohm, N-CHANNEL, Si, POWER, MOSFET, MO-041BA

From Semelab Plc.

StatusACTIVE
Channel TypeN-CHANNEL
China RoHS CompliantYes
ConfigurationSINGLE
DS Breakdown Voltage-Min90 V
Drain Current-Max (ID)0.9000 A
Drain-source On Resistance-Max5.3 ohm
EU RoHS CompliantYes
FET TechnologyMETAL-OXIDE SEMICONDUCTOR
Lead FreeYes
Mfr Package DescriptionLCC3-4
Number of Elements1
Number of Terminals4
Operating ModeENHANCEMENT
Package Body MaterialCERAMIC, METAL-SEALED COFIRED
Package ShapeRECTANGULAR
Package StyleSMALL OUTLINE
Pulsed Drain Current-Max (IDM)3 A
Surface MountYes
Terminal FinishGOLD
Terminal FormNO LEAD
Terminal PositionDUAL
Transistor ApplicationSWITCHING
Transistor Element MaterialSILICON
Transistor TypeGENERAL PURPOSE POWER

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