2N6661DCSM 900 mA, 90 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
From Semelab Plc.
| Status | ACTIVE |
| Channel Type | N-CHANNEL |
| Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min | 90 V |
| Drain Current-Max (ID) | 0.9000 A |
| Drain-source On Resistance-Max | 4 ohm |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Mfr Package Description | CERAMIC, LCC2-6 |
| Number of Elements | 2 |
| Number of Terminals | 6 |
| Operating Mode | ENHANCEMENT |
| Package Body Material | CERAMIC, METAL-SEALED COFIRED |
| Package Shape | RECTANGULAR |
| Package Style | SMALL OUTLINE |
| Power Dissipation Ambient-Max | 0.5000 W |
| Surface Mount | Yes |
| Terminal Finish | NOT SPECIFIED |
| Terminal Form | NO LEAD |
| Terminal Position | DUAL |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
| Transistor Type | GENERAL PURPOSE SMALL SIGNAL |
