SHD230202
6.2 A, 100 V, 0.35 ohm, N-CHANNEL, Si, POWER, MOSFET

From Sensitron Semiconductor

StatusACTIVE
Channel TypeN-CHANNEL
ConfigurationSINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min100 V
Drain Current-Max (ID)6.2 A
Drain-source On Resistance-Max0.3500 ohm
FET TechnologyMETAL-OXIDE SEMICONDUCTOR
Mfr Package DescriptionHERMETIC SEALED, LCC-28
Number of Elements1
Number of Terminals28
Operating ModeENHANCEMENT
Package Body MaterialCERAMIC, METAL-SEALED COFIRED
Package ShapeSQUARE
Package StyleCHIP CARRIER
Pulsed Drain Current-Max (IDM)12 A
Surface MountYes
Terminal FinishNOT SPECIFIED
Terminal FormNO LEAD
Terminal PositionQUAD
Transistor ApplicationSWITCHING
Transistor Element MaterialSILICON
Transistor TypeGENERAL PURPOSE POWER

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