SHD231006 0.25 A, 60 V, 3 ohm, N-CHANNEL, Si, POWER, MOSFET
From Sensitron Semiconductor
| Status | ACTIVE |
| Case Connection | ISOLATED |
| Channel Type | N-CHANNEL |
| Configuration | SINGLE |
| DS Breakdown Voltage-Min | 60 V |
| Drain Current-Max (ID) | 0.2500 A |
| Drain-source On Resistance-Max | 3 ohm |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Mfr Package Description | HERMETIC SEALED, CERAMIC, LCC-3 |
| Number of Elements | 1 |
| Number of Terminals | 3 |
| Operating Mode | ENHANCEMENT |
| Package Body Material | CERAMIC, METAL-SEALED COFIRED |
| Package Shape | RECTANGULAR |
| Package Style | CHIP CARRIER |
| Pulsed Drain Current-Max (IDM) | 1.3 A |
| Surface Mount | Yes |
| Terminal Finish | NOT SPECIFIED |
| Terminal Form | NO LEAD |
| Terminal Position | BOTTOM |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
| Transistor Type | GENERAL PURPOSE POWER |
