2N6661 Transistor; MOSFET; N-Channel; 90V; TO-49
From Solid State Manufacturing
Category | Power MOSFET |
Channel Mode | Enhancement |
Channel Type | N |
Configuration | Single |
Dimensions | 9.39 x 9.01 x 4.58 mm |
Forward Diode Voltage | -1.2 V |
Forward Transconductance | 195 mS |
Height | 4.57 mm |
Maximum Continuous Drain Current | ±0.9 A |
Maximum Drain Source Resistance | 5.3 Ω |
Maximum Drain Source Voltage | 110 V |
Maximum Gate Source Voltage | ±40 V |
Maximum Operating Temperature | +150 °C |
Maximum Power Dissipation | 6.25 W |
Minimum Operating Temperature | -55 °C |
Mounting Type | Through Hole |
Number of Elements per Chip | 1 |
Operating Temperature Range | -55 to +150 °C |
Package Type | TO-205AF |
Pin Count | 3 |
Typical Input Capacitance @ Vds | 50 pF |
Typical Turn On Delay Time | 8 ns |
Typical TurnOff Delay Time | 10 ns |