SDF20N60GAFEGSN
20 A, 600 V, 0.35 ohm, N-CHANNEL, Si, POWER, MOSFET

From Solitron Devices, Inc.

StatusACTIVE
Channel TypeN-CHANNEL
ConfigurationSINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min600 V
Drain Current-Max (ID)20 A
Drain-source On Resistance-Max0.3500 ohm
FET TechnologyMETAL-OXIDE SEMICONDUCTOR
Number of Elements1
Number of Terminals3
Operating ModeENHANCEMENT
Package Body MaterialMETAL
Package ShapeRECTANGULAR
Package StyleFLANGE MOUNT
Pulsed Drain Current-Max (IDM)80 A
Terminal FinishNOT SPECIFIED
Terminal FormPIN/PEG
Terminal PositionSINGLE
Transistor Element MaterialSILICON
Transistor TypeGENERAL PURPOSE POWER

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