Datasheet.Directory

{"Status":"ACTIVE","Channel Type":"P-CHANNEL","Terminal Finish":"NOT SPECIFIED","Package Body Material":"PLASTIC/EPOXY","Mfr Package Description":"LEAD FREE, 2-3T1A, 6 PIN","Terminal Form":"GULL WING","Operating Mode":"ENHANCEMENT","Package Style":"SMALL OUTLINE","Drain Current-Max (ID)":"5.5 A","Transistor Application":"SWITCHING","Number of Elements":"1","Transistor Element Material":"SILICON","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"DUAL","Transistor Type":"GENERAL PURPOSE SMALL ...

{"Polarity":"P","Gate-Source Voltage (Max)":"'\u00b18(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"5.5(A)","Mounting":"Surface Mount","Rad Hardened":"No","Drain-Source On-Volt":"12(V)","Packaging":"Tape and Reel","Power Dissipation":"2.2(W)","Operating Temp Range":"-55C to 150C","Package Type":"VS","Type":"Power MOSFET","Pin Count":"6","Number of Elements":"1"}...

{"Factory Pack Quantity":"3000","Vds - Drain-Source Breakdown Voltage":"- 12 V","Transistor Polarity":"P-Channel","Minimum Operating Temperature":"- 55 C","Channel Mode":"Enhancement","Configuration":"Single Quad Drain","Brand":"Toshiba","Id - Continuous Drain Current":"5.5 A","Mounting Style":"SMD/SMT","Pd - Power Dissipation":"2.2 W","Packaging":"Reel","Product Category":"MOSFET","Rds On - Drain-Source Resistance":"35 mOhms","Package / Case":"VS-6","Vgs - Gate-Source Breakdown Voltage":"8 V","Fall Time":"...

{"Category":"Discrete Semiconductor Products","FET Feature":"Logic Level Gate, 1.8V Drive","Mounting Type":"Surface Mount","Family":"FETs - Single","Vgs(th) (Max) @ Id":"1.2V @ 200\u00b5A","Series":"-","Package / Case":"SOT-23-6 Thin, TSOT-23-6","Supplier Device Package":"VS-6 (2.9x2.8)","Datasheets":"TPC6103 Mosfets Prod Guide","Rds On (Max) @ Id, Vgs":"35 mOhm @ 2.8A, 4.5V","FET Type":"MOSFET P-Channel, Metal Oxide","Packaging":"Tape & Reel (TR)","Power - Max":"-","Standard Package":"3,000","Drain to Sour...