1SV245TPH4
UHF BAND, 30 V, SILICON, VARIABLE CAPACITANCE DIODE

From Toshiba America Electronic Components, Inc.

StatusEOL/LIFEBUY
Breakdown Voltage-Min30 V
ConfigurationSINGLE
Diode Capacitance Ratio-Min5
Diode Element MaterialSILICON
Diode TypeVARIABLE CAPACITANCE DIODE
Frequency BandULTRA HIGH FREQUENCY
Number of Elements1
Number of Terminals2
Package Body MaterialPLASTIC/EPOXY
Package ShapeRECTANGULAR
Package StyleSMALL OUTLINE
Surface MountYes
Terminal FormGULL WING
Terminal PositionDUAL

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