2SA1162-GR,LF Bipolar Transistors - BJT PNP Transistor -50V S-Mini -0.15A -0.3V
From Toshiba
Brand | Toshiba |
Collector- Base Voltage VCBO | 50 V |
Collector- Emitter Voltage VCEO Max | 50 V |
Collector-Emitter Saturation Voltage | 0.1 V |
Configuration | Single |
DC Collector/Base Gain hfe Min | 70 |
DC Current Gain hFE Max | 400 |
Emitter- Base Voltage VEBO | 5 V |
Factory Pack Quantity | 3000 |
Gain Bandwidth Product fT | 80 MHz |
Manufacturer | Toshiba |
Maximum DC Collector Current | 150 mA |
Maximum Operating Temperature | + 125 C |
Minimum Operating Temperature | - 55 C |
Mounting Style | SMD/SMT |
Package / Case | SC-59-3 |
Packaging | Reel |
Pd - Power Dissipation | 150 mW |
Product Category | Bipolar Transistors - BJT |
RoHS | Details |
Transistor Polarity | PNP |