2SA1162-O(TE85L,F)
Bipolar Transistors - BJT PNP Transistor -50V S-Mini -0.15A -0.3V

From Toshiba

BrandToshiba
Collector- Base Voltage VCBO50 V
Collector- Emitter Voltage VCEO Max50 V
Collector-Emitter Saturation Voltage0.1 V
ConfigurationSingle
DC Collector/Base Gain hfe Min70
DC Current Gain hFE Max400
Emitter- Base Voltage VEBO5 V
Factory Pack Quantity3000
Gain Bandwidth Product fT80 MHz
ManufacturerToshiba
Maximum DC Collector Current150 mA
Maximum Operating Temperature+ 125 C
Minimum Operating Temperature- 55 C
Mounting StyleSMD/SMT
Package / CaseSC-59-3
PackagingReel
Pd - Power Dissipation150 mW
Product CategoryBipolar Transistors - BJT
RoHSDetails
Transistor PolarityPNP

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