2SA1162-O,LF
Bipolar Transistors - BJT Bias Resistor Built-in transistor

From Toshiba

BrandToshiba
Collector- Base Voltage VCBO- 50 V
Collector- Emitter Voltage VCEO Max- 50 V
Collector-Emitter Saturation Voltage- 0.3 V
Emitter- Base Voltage VEBO- 5 V
Gain Bandwidth Product fT80 MHz
ManufacturerToshiba
Maximum DC Collector Current- 150 mA
Mounting StyleSMD/SMT
Package / CaseTO-236MOD
PackagingReel
Pd - Power Dissipation150 mW
Product CategoryBipolar Transistors - BJT
RoHSDetails
Transistor PolarityPNP

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