2SA1162S-GR,LF Bipolar Transistors - BJT SM Sig PNP Trans VCEO -50V IC -150mA
From Toshiba
Brand | Toshiba |
Collector- Emitter Voltage VCEO Max | - 50 V |
DC Collector/Base Gain hfe Min | 70 |
Emitter- Base Voltage VEBO | - 5 V |
Factory Pack Quantity | 3000 |
Gain Bandwidth Product fT | 80 MHz |
Manufacturer | Toshiba |
Mounting Style | SMD/SMT |
Package / Case | SC-59 |
Packaging | Reel |
Pd - Power Dissipation | 150 mW |
Product Category | Bipolar Transistors - BJT |
RoHS | Details |
Transistor Polarity | PNP |