CMH04(TE12L,Q,M)
DIODE GEN PURP 200V 1A MFLAT

From Toshiba Semiconductor and Storage

Capacitance @ Vr, F-
CategoryDiscrete Semiconductor Products
Current - Average Rectified (Io)1A
Current - Reverse Leakage @ Vr10µA @ 200V
DatasheetsCMH04 -
Diode TypeStandard
FamilyDiodes, Rectifiers - Single
Mounting TypeSurface Mount
Operating Temperature - Junction-40°C ~ 150°C
Other NamesCMH04(TE12L,Q) CMH04(TE12L,Q)-ND CMH04(TE12LQM)
Package / CaseSOD-128
PackagingTape & Reel (TR)
Reverse Recovery Time (trr)35ns
Series-
SpeedFast Recovery = 200mA (Io)
Standard Package3,000
Supplier Device PackageM-FLAT (2.4x3.8)
Voltage - DC Reverse (Vr) (Max)200V
Voltage - Forward (Vf) (Max) @ If980mV @ 1A

External links