{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"FLAT","Power Dissipation Ambient-Max":"116 W","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"4 A","Configuration":"COMMON SOURCE, 2 ELEMENTS","Transistor Type":"RF POWER","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"65 V","Transistor Application":"AMPLIFIER","Surface Mount":"Yes","...