{"Number of Outputs":"1 Output","Product Category":"Wall Mount AC Adapters","Commercial\/Medical":"Commercial","Series":"AC PLUG-EU","Region":"Europe","Mounting Style":"Wall, Interchangeable Plug","Packaging":"Bulk","Input Voltage Range":"90 VAC to 264 VAC, 120 VDC to 370 VDC","Brand":"Mean Well","AC Plug included\/required":"Included","RoHS":"Details","Manufacturer":"Mean Well"}...

{"Number of Outputs":"1 Output","Output Voltage-Channel 1":"-","Product Category":"Wall Mount AC Adapters","Commercial\/Medical":"Medical","Brand":"Mean Well","Mounting Style":"Wall, Plug Adapter","DC Output Cord Length":"-","Packaging":"Bulk","Output Current-Channel 1":"-","Output Power":"-","RoHS":"Details","DC Output Connector":"None","Region":"Europe","Input Voltage Range":"80 VAC to 264 VAC, 113 VDC to 370 VDC","AC Plug included\/required":"Included","Manufacturer":"Mean Well"}...

{"For Use With":"GE15 Series, GE24 Series Power Supplies","Type":"Interchangeable AC Inlet Plug"}...

{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Mounting Type":"Surface Mount","Family":"FETs - Single","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Series":"-","Package \/ Case":"TO-263-3, D\u00b2Pak (2 Leads + Tab), TO-263AB","Supplier Device Package":"TO-263-3","Datasheets":"NP109N04PUG","Rds On (Max) @ Id, Vgs":"2.3 mOhm @ 55A, 10V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Tape & Reel (TR)","Power - Max":"1.8W","Standard Package":"800","Drain to Source Voltage (Vdss)":"...

{"Terminal Finish":"MATTE TIN","Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"1.8 W","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"110 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0023 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"440 A","Channel Type":"N-CHANNEL","FET T...

{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Product Photos":"TO-263","Family":"FETs - Single","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Series":"-","Standard Package":"800","Supplier Device Package":"TO-263","Datasheets":"NP110N03PUG","Rds On (Max) @ Id, Vgs":"1.5 mOhm @ 55A, 10V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Tape & Reel (TR)","Power - Max":"1.8W","Package \/ Case":"TO-263-3, D\u00b2Pak (2 Leads + Tab), TO-263AB","Mounting Type":"Surface Mount","Drain to ...

{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Product Photos":"TO-263","Family":"FETs - Single","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Series":"-","Standard Package":"800","Supplier Device Package":"TO-263","Datasheets":"NP110N04PUG","Rds On (Max) @ Id, Vgs":"1.8 mOhm @ 55A, 10V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Tape & Reel (TR)","Power - Max":"1.8W","Package \/ Case":"TO-263-3, D\u00b2Pak (2 Leads + Tab), TO-263AB","Mounting Type":"Surface Mount","Drain to ...

{"Category":"MOSFET","Maximum Drain Source Voltage":"55 V","Typical Rise Time":"201 ns","Typical Turn-Off Delay Time":"131 ns","Description":"Value","Maximum Continuous Drain Current":"110 A","Package":"3TO-263","Mounting":"Surface Mount","Maximum Gate Source Voltage":"\u00b120 V","Typical Turn-On Delay Time":"63 ns","Channel Mode":"Enhancement","Operating Temperature":"-55 to 175 \u00b0C","RDS-on":"2.4@10V mOhm","Manufacturer":"Renesas Electronics","Typical Fall Time":"19 ns"}...

{"Category":"Discrete Semiconductor Products","Rds On (Max) @ Id, Vgs":"2.4 mOhm @ 55A, 10V","FET Feature":"Standard","Family":"FETs - Single","Product Photos":"TO-263","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Series":"-","Package \/ Case":"TO-263-4, D\u00b2Pak (3 Leads + Tab), TO-263AA","Supplier Device Package":"TO-263","Packaging":"Tape & Reel (TR)","FET Type":"MOSFET N-Channel, Metal Oxide","Datasheets":"NP110N055PUG","Power - Max":"1.8W","Standard Package":"800","PCN Assembly\/Origin":"Wafer Fabrication...

{"Polarity":"N","Drain-Source On-Res":"0.0024(ohm)","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"110(A)","Mounting":"Surface Mount","Rad Hardened":"No","Drain-Source On-Volt":"55(V)","Packaging":"Tape and Reel","Power Dissipation":"1.8(W)","Operating Temp Range":"-55C to 175C","Package Type":"D2PAK","Type":"Power MOSFET","Pin Count":"2 +Tab","Number of Elements":"1"}...

{"Category":"Discrete Semiconductor Products","Rds On (Max) @ Id, Vgs":"2.4 mOhm @ 55A, 10V","FET Feature":"Standard","Family":"FETs - Single","Product Photos":"TO-263","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Series":"-","Package \/ Case":"TO-263-3, D\u00b2Pak (2 Leads + Tab), TO-263AB","Supplier Device Package":"TO-263","Packaging":"Tape & Reel (TR)","FET Type":"MOSFET N-Channel, Metal Oxide","Datasheets":"NP110N055PUG","Power - Max":"1.8W","Standard Package":"800","PCN Assembly\/Origin":"Wafer Fabrication...

{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Product Photos":"D2PAK SOT427","Family":"FETs - Single","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Series":"-","Standard Package":"800","Supplier Device Package":"TO-263-7","Datasheets":"NP160N04TUG","Rds On (Max) @ Id, Vgs":"2 mOhm @ 80A, 10V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Tape & Reel (TR)","Power - Max":"1.8W","Package \/ Case":"TO-263-7, D\u00b2Pak (6 Leads + Tab)","Mounting Type":"Surface Mount","Drain to Sour...

{"Terminal Finish":"MATTE TIN","Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"1.8 W","Avalanche Energy Rating (Eas)":"372 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"160 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0020 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":...

{"Category":"Discrete Semiconductor Products","Rds On (Max) @ Id, Vgs":"1.8 mOhm @ 80A, 10V","FET Feature":"Standard","Mounting Type":"Surface Mount","Family":"FETs - Single","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Series":"-","Package \/ Case":"TO-263-7, D\u00b2Pak (6 Leads + Tab)","Supplier Device Package":"TO-263-7","Packaging":"Tape & Reel (TR)","FET Type":"MOSFET N-Channel, Metal Oxide","Datasheets":"NP161N04TUG","Power - Max":"1.8W","Standard Package":"800","Drain to Source Voltage (Vdss)":"40V","Curr...

{"Terminal Finish":"MATTE TIN","Terminal Form":"GULL WING","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"160 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0018 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"640 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","...

{"Terminal Finish":"PURE TIN","Terminal Form":"FLAT","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"16 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0250 ohm","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"40 V","Transistor Application":"SWITCHING","Surface Mount"...

{"Terminal Finish":"PURE TIN","Terminal Form":"FLAT","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"16 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0250 ohm","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"40 V","Transistor Application":"SWITCHING","Surface Mount"...

{"Category":"Discrete Semiconductor Products","Rds On (Max) @ Id, Vgs":"1.5 mOhm @ 90A, 10V","FET Feature":"Standard","Mounting Type":"Surface Mount","Family":"FETs - Single","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Series":"-","Standard Package":"800","Supplier Device Package":"TO-263-7","Packaging":"Tape & Reel (TR)","FET Type":"MOSFET N-Channel, Metal Oxide","Datasheets":"NP180N04TUG","Power - Max":"1.8W","PCN Assembly\/Origin":"Wafer Fabrication Site Change 10\/Oct\/2013","Package \/ Case":"TO-263-7, D\u...

{"Terminal Finish":"MATTE TIN","Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"1.8 W","Avalanche Energy Rating (Eas)":"518 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"180 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0015 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":...

{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Product Photos":"NPxxx04YUG-E1-AY","Family":"FETs - Single","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Input Capacitance (Ciss) @ Vds":"2850pF @ 25V","Series":"-","Standard Package":"1","Supplier Device Package":"8-HSON","Datasheets":"NP35N04YUG","Rds On (Max) @ Id, Vgs":"10 mOhm @ 17.5A, 10V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Digi-Reel\u00ae","Power - Max":"1W","Package \/ Case":"8-SMD, Flat Lead Exposed Pad","Mounti...

{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"FLAT","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"35 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0100 ohm","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"40 V","Tr...

{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"1.2 W","Package Shape":"RECTANGULAR","Status":"DISCONTINUED","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"52 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0140 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"170 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCT...

{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Product Photos":"TO-263","Family":"FETs - Single","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Series":"-","Standard Package":"2,500","Supplier Device Package":"TO-252 (MP-3ZK)","Datasheets":"NP52N055SUG","Rds On (Max) @ Id, Vgs":"14 mOhm @ 26A, 10V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Tape & Reel (TR)","Power - Max":"1.2W","Package \/ Case":"TO-252-3, DPak (2 Leads + Tab), SC-63","Mounting Type":"Surface Mount","Drain to...

{"Terminal Finish":"TIN BISMUTH","Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"1.2 W","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"52 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0140 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"170 A","Channel Type":"N-CHANNEL","FET ...

{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"1.2 W","Package Shape":"RECTANGULAR","Status":"DISCONTINUED","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"52 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0140 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"170 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCT...

{"Terminal Finish":"TIN BISMUTH","Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"1.2 W","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"52 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0140 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"170 A","Channel Type":"N-CHANNEL","FET ...

{"Category":"Discrete Semiconductor Products","Rds On (Max) @ Id, Vgs":"5 mOhm @ 28A, 10V","FET Feature":"Logic Level Gate","Family":"FETs - Single","Product Photos":"TO-263","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Series":"-","Package \/ Case":"TO-252-3, DPak (2 Leads + Tab), SC-63","Supplier Device Package":"TO-252 (MP-3ZK)","Packaging":"Tape & Reel (TR)","FET Type":"MOSFET N-Channel, Metal Oxide","Datasheets":"NP55N03SUG","Power - Max":"1.2W","Standard Package":"2,500","PCN Assembly\/Origin":"Wafer Fabri...

{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"1.2 W","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"55 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0050 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"220 A","Channel Type":"N-CHANNEL","FE...

{"Category":"MOSFET","Maximum Drain Source Voltage":"40 V","Typical Rise Time":"52 ns","Typical Turn-Off Delay Time":"78 ns","Description":"Value","Maximum Continuous Drain Current":"55 A","Package":"3TO-252","Mounting":"Surface Mount","Maximum Gate Source Voltage":"\u00b120 V","Typical Turn-On Delay Time":"30 ns","Channel Mode":"Enhancement","Operating Temperature":"-55 to 175 \u00b0C","RDS-on":"6.5@10V mOhm","Manufacturer":"Renesas Electronics","Typical Fall Time":"12 ns"}...

{"Category":"Discrete Semiconductor Products","Rds On (Max) @ Id, Vgs":"6.5 mOhm @ 28A, 10V","FET Feature":"Standard","Family":"FETs - Single","Product Photos":"TO-263","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Series":"-","Package \/ Case":"TO-252-3, DPak (2 Leads + Tab), SC-63","Supplier Device Package":"TO-252 (MP-3ZK)","Packaging":"Tape & Reel (TR)","FET Type":"MOSFET N-Channel, Metal Oxide","Datasheets":"NP55N04SUG","Power - Max":"1.2W","Standard Package":"2,500","PCN Assembly\/Origin":"Wafer Fabrication...

{"Category":"MOSFET","Maximum Drain Source Voltage":"40 V","Typical Rise Time":"52 ns","Typical Turn-Off Delay Time":"78 ns","Description":"Value","Maximum Continuous Drain Current":"55 A","Package":"3TO-252","Mounting":"Surface Mount","Maximum Gate Source Voltage":"\u00b120 V","Typical Turn-On Delay Time":"30 ns","Channel Mode":"Enhancement","Operating Temperature":"-55 to 175 \u00b0C","RDS-on":"6.5@10V mOhm","Manufacturer":"Renesas Electronics","Typical Fall Time":"12 ns"}...

{"Category":"MOSFET","Maximum Drain Source Voltage":"55 V","Typical Rise Time":"18 ns","Typical Turn-Off Delay Time":"60 ns","Description":"Value","Maximum Continuous Drain Current":"55 A","Package":"3TO-252","Mounting":"Surface Mount","Maximum Gate Source Voltage":"\u00b120 V","Typical Turn-On Delay Time":"24 ns","Channel Mode":"Enhancement","Operating Temperature":"-55 to 175 \u00b0C","RDS-on":"10@10V mOhm","Manufacturer":"Renesas Electronics","Typical Fall Time":"8 ns"}...

{"Category":"Discrete Semiconductor Products","Rds On (Max) @ Id, Vgs":"10 mOhm @ 28A, 10V","FET Feature":"Standard","Family":"FETs - Single","Product Photos":"TO-263","Vgs(th) (Max) @ Id":"-","Series":"-","Package \/ Case":"TO-252-3, DPak (2 Leads + Tab), SC-63","Supplier Device Package":"TO-252 (MP-3ZK)","Packaging":"Tape & Reel (TR)","FET Type":"MOSFET N-Channel, Metal Oxide","Datasheets":"NP55N055SUG","Power - Max":"1.2W","Standard Package":"2,500","PCN Assembly\/Origin":"Wafer Fabrication Site Change 1...

{"Category":"Discrete Semiconductor Products","Rds On (Max) @ Id, Vgs":"4.8 mOhm @ 30A, 10V","FET Feature":"Standard","Family":"FETs - Single","Product Photos":"TO-263","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Series":"-","Package \/ Case":"TO-263-3, D\u00b2Pak (2 Leads + Tab), TO-263AB","Supplier Device Package":"TO-263","Packaging":"Tape & Reel (TR)","FET Type":"MOSFET N-Channel, Metal Oxide","Datasheets":"NP60N03KUG","Power - Max":"1.8W","Standard Package":"800","PCN Assembly\/Origin":"Wafer Fabrication S...

{"Qg Gate Charge":"62 nC","Drain-to-Source Voltage [Vdss]":"30 V","Channel Type":"N-Channel","Rated Power Dissipation":"88 W","Drain-Source On Resistance-Max":"4.8 m\u03a9"}...

{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Package \/ Case":"TO-252-3, DPak (2 Leads + Tab), SC-63","Current - Continuous Drain (Id) @ 25\u00b0C":"60A (Tc)","Gate Charge (Qg) @ Vgs":"135nC @ 10V","Product Photos":"TO-263","PCN Assembly\/Origin":"Wafer Fabrication Site Change 10\/Oct\/2013","Rds On (Max) @ Id, Vgs":"3.8 mOhm @ 30A, 10V","Datasheets":"NP60N03SUG","FET Type":"MOSFET N-Channel, Metal Oxide","Standard Package":"1","Drain to Sour...

{"Terminal Finish":"MATTE TIN","Terminal Form":"GULL WING","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"60 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0038 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"240 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","D...

{"Category":"Discrete Semiconductor Products","Rds On (Max) @ Id, Vgs":"6.1 mOhm @ 30A, 10V","FET Feature":"Standard","Product Photos":"TO-263","Family":"FETs - Single","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Series":"-","Standard Package":"800","Supplier Device Package":"TO-263","Packaging":"Tape & Reel (TR)","FET Type":"MOSFET N-Channel, Metal Oxide","Datasheets":"NP60N04KUG","Power - Max":"1.8W","Package \/ Case":"TO-263-3, D\u00b2Pak (2 Leads + Tab), TO-263AB","Mounting Type":"Surface Mount","Drain to S...

{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Product Photos":"TO-263","Family":"FETs - Single","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Series":"-","Standard Package":"800","Supplier Device Package":"TO-263","Datasheets":"NP60N055KUG","Rds On (Max) @ Id, Vgs":"9.4 mOhm @ 30A, 10V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Tape & Reel (TR)","Power - Max":"1.8W","Package \/ Case":"TO-263-3, D\u00b2Pak (2 Leads + Tab), TO-263AB","Mounting Type":"Surface Mount","Drain to ...

{"Terminal Finish":"TIN BISMUTH","Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"1.8 W","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"60 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0094 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"240 A","Channel Type":"N-CHANNEL","FET ...

{"Terminal Finish":"TIN BISMUTH","Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"1.8 W","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"60 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0094 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"240 A","Channel Type":"N-CHANNEL","FET ...

{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Online Catalog":"N-Channel Logic Level Gate FETs","Product Photos":"NPxxx04YUG-E1-AY","Family":"FETs - Single","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Input Capacitance (Ciss) @ Vds":"5430pF @ 25V","Series":"-","Standard Package":"2,500","Supplier Device Package":"8-HSON","Datasheets":"NP74N04YUG","Rds On (Max) @ Id, Vgs":"5.5 mOhm @ 37.5A, 10V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Tape & Reel (TR)","Power - Max":"1W"...

{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"FLAT","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"75 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0055 ohm","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"40 V","Tr...