{"Terminal Form":"WIRE","Qualification Status":"COMMERCIAL","Package Shape":"ROUND","Status":"Discontinued","Package Style":"CYLINDRICAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.8800 A","Configuration":"SINGLE WITH BUILT-IN DIODE","JESD-30 Code":"O-MBCY-W3","Number of Terminals":"3","DS Breakdown Voltage-Min":"80 V","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Transistor Application":"SWITCHING","Surface Mount":"NO","Case Connection":"DRAIN","Operating Mode":"ENHANCEMENT MODE","...

{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Mounting Type":"Through Hole","Family":"FETs - Single","Vgs(th) (Max) @ Id":"4.5V @ 1mA","Series":"-","Package \/ Case":"TO-205AD, TO-39-3 Metal Can","Supplier Device Package":"TO-39","Datasheets":"VP0808B\/L\/M,VP1008B\/L\/M","Rds On (Max) @ Id, Vgs":"5 Ohm @ 1A, 10V","FET Type":"MOSFET P-Channel, Metal Oxide","Packaging":"Tube","Power - Max":"6.25W","Standard Package":"20","Drain to Source Voltage (Vdss)":"80V","Current - Continuous D...