{"Terminal Form":"WIRE","Qualification Status":"COMMERCIAL","Package Shape":"ROUND","Status":"Discontinued","Package Style":"CYLINDRICAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.7900 A","Configuration":"SINGLE WITH BUILT-IN DIODE","JESD-30 Code":"O-MBCY-W3","Number of Terminals":"3","DS Breakdown Voltage-Min":"100 V","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Transistor Application":"SWITCHING","Surface Mount":"NO","Case Connection":"DRAIN","Operating Mode":"ENHANCEMENT MODE",...

{"Terminal Form":"WIRE","Operating Temperature-Max":"150 Cel","Qualification Status":"COMMERCIAL","Package Shape":"ROUND","Status":"Discontinued","Package Body Material":"METAL","Turn-on Time-Max (ton)":"55 ns","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.7900 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"5 ohm","Feedback Cap-Max (Crss)":"25 pF","Pulsed Drain Current-Max (IDM)":"3 A","Turn-off Time-Max (toff)":"60 ns","DS Breakdown Voltage-Min":"100...