{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Online Catalog":"P-Channel Standard FETs","Product Photos":"TO-92-3(StandardBody),TO-226_straightlead","Family":"FETs - Single","Vgs(th) (Max) @ Id":"3.5V @ 10mA","Series":"-","Package \/ Case":"TO-226-3, TO-92-3 (TO-226AA)","Supplier Device Package":"TO-92-3","Datasheets":"VP2206","Rds On (Max) @ Id, Vgs":"900 mOhm @ 3.5A, 10V","FET Type":"MOSFET P-Channel, Metal Oxide","Packaging":"Bulk","Power - Max":"740mW","Standard Package":"1,000...

{"Factory Pack Quantity":"2000","Vds - Drain-Source Breakdown Voltage":"- 60 V","Transistor Polarity":"P-Channel","Minimum Operating Temperature":"- 55 C","Channel Mode":"Enhancement","Vgs - Gate-Source Breakdown Voltage":"20 V","Brand":"Microchip Technology","Id - Continuous Drain Current":"- 640 mA","Mounting Style":"Through Hole","Pd - Power Dissipation":"1 W","Packaging":"Reel","Rise Time":"16 ns","Product Category":"MOSFET","Rds On - Drain-Source Resistance":"1.5 Ohms","Package \/ Case":"TO-92-3","Typi...

{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Series":"-","Mounting Type":"Through Hole","Family":"FETs - Single","Vgs(th) (Max) @ Id":"3.5V @ 10mA","PCN Assembly\/Origin":"Additional Fabrication Site 03\/Sep\/2014 Fab Site Addition 14\/Aug\/2014","Package \/ Case":"TO-226-3, TO-92-3 (TO-226AA) Formed Leads","Supplier Device Package":"TO-92-3","Datasheets":"VP2206","Rds On (Max) @ Id, Vgs":"900 mOhm @ 3.5A, 10V","FET Type":"MOSFET P-Channel, Metal Oxide","Packaging":"Tape & Reel (T...

{"Factory Pack Quantity":"2000","Vds - Drain-Source Breakdown Voltage":"- 60 V","Transistor Polarity":"P-Channel","Channel Mode":"Enhancement","Brand":"Microchip Technology","Id - Continuous Drain Current":"- 640 mA","Mounting Style":"Through Hole","Packaging":"Reel","Product Category":"MOSFET","Rds On - Drain-Source Resistance":"1.5 Ohms","Package \/ Case":"TO-92-3","RoHS":"Details","Manufacturer":"Microchip"}...

{"Factory Pack Quantity":"2000","Vds - Drain-Source Breakdown Voltage":"- 60 V","Transistor Polarity":"P-Channel","Minimum Operating Temperature":"- 55 C","Channel Mode":"Enhancement","Vgs - Gate-Source Breakdown Voltage":"20 V","Brand":"Microchip Technology","Id - Continuous Drain Current":"- 640 mA","Mounting Style":"Through Hole","Pd - Power Dissipation":"1 W","Packaging":"Reel","Rise Time":"16 ns","Product Category":"MOSFET","Rds On - Drain-Source Resistance":"1.5 Ohms","Package \/ Case":"TO-92-3","Typi...

{"Factory Pack Quantity":"2000","Vds - Drain-Source Breakdown Voltage":"- 60 V","Transistor Polarity":"P-Channel","Minimum Operating Temperature":"- 55 C","Channel Mode":"Enhancement","Vgs - Gate-Source Breakdown Voltage":"20 V","Brand":"Microchip Technology","Id - Continuous Drain Current":"- 640 mA","Mounting Style":"Through Hole","Pd - Power Dissipation":"1 W","Packaging":"Reel","Rise Time":"16 ns","Product Category":"MOSFET","Rds On - Drain-Source Resistance":"1.5 Ohms","Package \/ Case":"TO-92-3","Typi...

{"Terminal Finish":"MATTE TIN","Terminal Form":"WIRE","Qualification Status":"COMMERCIAL","JESD-609 Code":"e3","Package Shape":"ROUND","Status":"Active","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.6400 A","Feedback Cap-Max (Crss)":"40 pF","EU RoHS Compliant":"Yes","Peak Reflow Temperature (Cel)":"NOT SPECIFIED","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.9000 ohm","Moisture Sensitivity Level":"NOT APPLICABL...

{"Polarity":"P","Gate-Source Voltage (Max)":"\ufffd20 V","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"0.64 A","Mounting":"Through Hole","Drain-Source On-Volt":"60 V","Pin Count":"3","Packaging":"Tape and Reel","Power Dissipation":"1 W","Operating Temp Range":"-55C to 150C","Package Type":"TO-92","Rad Hardened":"No","Type":"Power MOSFET","Drain-Source On-Res":"0.9 ohm","Number of Elements":"1"}...