{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Online Catalog":"P-Channel Standard FETs","Product Photos":"TO-92-3(StandardBody),TO-226_straightlead","Family":"FETs - Single","Vgs(th) (Max) @ Id":"3.5V @ 10mA","Series":"-","Package \/ Case":"TO-226-3, TO-92-3 (TO-226AA)","Supplier Device Package":"TO-92-3","Datasheets":"VP3203","Rds On (Max) @ Id, Vgs":"600 mOhm @ 3A, 10V","FET Type":"MOSFET P-Channel, Metal Oxide","Packaging":"Bulk","Power - Max":"740mW","Standard Package":"1,000",...

{"Factory Pack Quantity":"2000","Vds - Drain-Source Breakdown Voltage":"- 30 V","Transistor Polarity":"P-Channel","Minimum Operating Temperature":"- 55 C","Channel Mode":"Enhancement","Vgs - Gate-Source Breakdown Voltage":"20 V","Brand":"Microchip Technology","Id - Continuous Drain Current":"- 650 mA","Mounting Style":"Through Hole","Pd - Power Dissipation":"740 mW","Packaging":"Reel","Rise Time":"15 ns","Product Category":"MOSFET","Rds On - Drain-Source Resistance":"1 Ohms","Package \/ Case":"TO-92-3","Typ...

{"Factory Pack Quantity":"2000","Vds - Drain-Source Breakdown Voltage":"- 30 V","Transistor Polarity":"P-Channel","Minimum Operating Temperature":"- 55 C","Channel Mode":"Enhancement","Vgs - Gate-Source Breakdown Voltage":"20 V","Brand":"Microchip Technology","Id - Continuous Drain Current":"- 650 mA","Mounting Style":"Through Hole","Pd - Power Dissipation":"740 mW","Packaging":"Reel","Rise Time":"15 ns","Product Category":"MOSFET","Rds On - Drain-Source Resistance":"1 Ohms","Package \/ Case":"TO-92-3","Typ...

{"Factory Pack Quantity":"2000","Vds - Drain-Source Breakdown Voltage":"- 30 V","Transistor Polarity":"P-Channel","Channel Mode":"Enhancement","Brand":"Microchip Technology","Id - Continuous Drain Current":"- 650 mA","Mounting Style":"Through Hole","Packaging":"Reel","Product Category":"MOSFET","Rds On - Drain-Source Resistance":"1 Ohms","Package \/ Case":"TO-92-3","RoHS":"Details","Manufacturer":"Microchip"}...

{"Factory Pack Quantity":"2000","Vds - Drain-Source Breakdown Voltage":"- 30 V","Transistor Polarity":"P-Channel","Minimum Operating Temperature":"- 55 C","Channel Mode":"Enhancement","Vgs - Gate-Source Breakdown Voltage":"20 V","Brand":"Microchip Technology","Id - Continuous Drain Current":"- 650 mA","Mounting Style":"Through Hole","Pd - Power Dissipation":"740 mW","Packaging":"Reel","Rise Time":"15 ns","Product Category":"MOSFET","Rds On - Drain-Source Resistance":"1 Ohms","Package \/ Case":"TO-92-3","Typ...

{"Factory Pack Quantity":"2000","Vds - Drain-Source Breakdown Voltage":"- 30 V","Transistor Polarity":"P-Channel","Minimum Operating Temperature":"- 55 C","Channel Mode":"Enhancement","Vgs - Gate-Source Breakdown Voltage":"20 V","Brand":"Microchip Technology","Id - Continuous Drain Current":"- 650 mA","Mounting Style":"Through Hole","Pd - Power Dissipation":"740 mW","Packaging":"Reel","Rise Time":"15 ns","Product Category":"MOSFET","Rds On - Drain-Source Resistance":"1 Ohms","Package \/ Case":"TO-92-3","Typ...

{"Terminal Finish":"MATTE TIN","Terminal Form":"THROUGH-HOLE","Operating Temperature-Max":"150 Cel","Qualification Status":"COMMERCIAL","JESD-609 Code":"e3","Package Shape":"ROUND","Additional Feature":"HIGH INPUT IMPEDANCE","Status":"Active","Package Style":"CYLINDRICAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.6500 A","Feedback Cap-Max (Crss)":"60 pF","Sub Category":"Other Transistors","Peak Reflow Temperature (Cel)":"NOT SPECIFIED","Configuration":"SINGLE WITH BUILT-IN DIODE","...