2MI100F025 N-Channel Enhancement MOSFET
From Various
@(VDS) (V) (Test Condition) | 20 |
@I(D) (A) (Test Condition) | 25 |
@V(DS) (V) (Test Condition) | 25 |
Absolute Max. Power Diss. (W) | 400 |
I(D) Abs. Drain Current (A) | 100 |
I(DSS) Min. (A) | 1.0m |
I(GSS) Max. (A) | 100n |
Military | N |
Package | Module-q |
V(BR)DSS (V) | 250 |
V(BR)GSS (V) | 20 |
g(fs) Max, (S) Trans. conduct, | 55 |
r(DS)on Max. (Ohms) | 32m |