2MI100F050
N-Channel Enhancement MOSFET

From Various

@(VDS) (V) (Test Condition)20
@I(D) (A) (Test Condition)50
@V(DS) (V) (Test Condition)25
Absolute Max. Power Diss. (W)400
C(iss) Max. (F)7.8n
I(D) Abs. Drain Current (A)100
I(DSS) Min. (A)1.0m
I(GSS) Max. (A)100n
MilitaryN
PackageModule-q
V(BR)DSS (V)250
V(BR)GSS (V)20
g(fs) Max, (S) Trans. conduct,55
r(DS)on Max. (Ohms)110m

External links