IDI8001 NPN Darlington Transistor
From Various
| @I(C) (A) (Test Condition) | 5.0 |
| @V(CE) (V) (Test Condition) | 5.0 |
| Absolute Max. Power Diss. (W) | 90 |
| I(C) Abs.(A) Collector Current | 15 |
| I(CBO) Max. (A) | 1.0m |
| Military | N |
| Package | TO-3 |
| Semiconductor Material | Silicon |
| V(BR)CBO (V) | 200 |
| V(BR)CEO (V) | 200 |
| h(FE) Min. Static Current Gain | 100 |
| t(f) Max. (s) Fall time. | 1.0u |
| t(r) Max. (s) Rise time | 500n |
| t(s) Max. (s) Storage time. | 3.0u |
