IRF9Z10-003PBF
4.7 A, 50 V, 0.5 ohm, P-CHANNEL, Si, POWER, MOSFET

From Vishay Presicion Group

StatusACTIVE
Case ConnectionDRAIN
Channel TypeP-CHANNEL
ConfigurationSINGLE
DS Breakdown Voltage-Min50 V
Drain Current-Max (ID)4.7 A
Drain-source On Resistance-Max0.5000 ohm
EU RoHS CompliantYes
FET TechnologyMETAL-OXIDE SEMICONDUCTOR
Lead FreeYes
Number of Elements1
Number of Terminals3
Operating ModeENHANCEMENT
Package Body MaterialPLASTIC/EPOXY
Package ShapeRECTANGULAR
Package StyleFLANGE MOUNT
Pulsed Drain Current-Max (IDM)19 A
Terminal FinishNOT SPECIFIED
Terminal FormTHROUGH-HOLE
Terminal PositionSINGLE
Transistor Element MaterialSILICON
Transistor TypeGENERAL PURPOSE POWER

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