VQ1000J-2
0.225 A, 60 V, 5.5 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET

From Vishay Intertechnology, Inc.

StatusDiscontinued
ConfigurationSEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min60 V
Drain Current-Max (ID)0.2250 A
Drain-source On Resistance-Max5.5 ohm
FET TechnologyMETAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss)5 pF
JESD-30 CodeR-PDIP-T14
Number of Elements4
Number of Terminals14
Operating ModeENHANCEMENT MODE
Operating Temperature-Max150 Cel
Package Body MaterialPLASTIC/EPOXY
Package ShapeRECTANGULAR
Package StyleIN-LINE
Polarity/Channel TypeN-CHANNEL
Pulsed Drain Current-Max (IDM)1 A
Qualification StatusCOMMERCIAL
Surface MountNO
Terminal FormTHROUGH-HOLE
Terminal PositionDUAL
Transistor Element MaterialSILICON
Turn-off Time-Max (toff)10 ns
Turn-on Time-Max (ton)10 ns

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