VQ2001J
0.6 A, 30 V, 2 ohm, 4 CHANNEL, P-CHANNEL, Si, POWER, MOSFET

From Vishay Intertechnology, Inc.

StatusDiscontinued
ConfigurationSEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min30 V
Drain Current-Max (ID)0.6000 A
Drain-source On Resistance-Max2 ohm
FET TechnologyMETAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss)60 pF
JESD-30 CodeR-PDIP-T14
JESD-609 Codee0
Mfr Package DescriptionPLASTIC, DIP-14
Moisture Sensitivity LevelNOT SPECIFIED
Number of Elements4
Number of Terminals14
Operating ModeENHANCEMENT MODE
Operating Temperature-Max150 Cel
Package Body MaterialPLASTIC/EPOXY
Package ShapeRECTANGULAR
Package StyleIN-LINE
Peak Reflow Temperature (Cel)NOT SPECIFIED
Polarity/Channel TypeP-CHANNEL
Pulsed Drain Current-Max (IDM)2 A
Qualification StatusCOMMERCIAL
Surface MountNO
Terminal FinishTIN LEAD
Terminal FormTHROUGH-HOLE
Terminal PositionDUAL
Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
Transistor ApplicationSWITCHING
Transistor Element MaterialSILICON
Turn-off Time-Max (toff)30 ns
Turn-on Time-Max (ton)30 ns

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