{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Product Photos":"TO-3P-3,TO-247-3","Family":"FETs - Single","Vgs(th) (Max) @ Id":"-","Series":"-","Standard Package":"100","Supplier Device Package":"TO-3PB","Datasheets":"WPB4002","Rds On (Max) @ Id, Vgs":"360 mOhm @ 11.5A, 10V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Tray","Power - Max":"2.5W","Package \/ Case":"TO-3P-3, SC-65-3","Mounting Type":"Through Hole","Drain to Source Voltage (Vdss)":"600V","Current - Continuo...

{"Category":"Discrete Semiconductor Products","Rds On (Max) @ Id, Vgs":"360 mOhm @ 11.5A, 10V","FET Feature":"Standard","Mounting Type":"Through Hole","Family":"FETs - Single","Vgs(th) (Max) @ Id":"-","Series":"-","Package \/ Case":"TO-3P-3, SC-65-3","Supplier Device Package":"TO-3P-3L","Packaging":"Tube","FET Type":"MOSFET N-Channel, Metal Oxide","Datasheets":"WPB4002","Power - Max":"2.5W","Standard Package":"30","Drain to Source Voltage (Vdss)":"600V","Current - Continuous Drain (Id) @ 25\u00b0C":"23A (Ta...

{"Terminal Form":"THROUGH-HOLE","Power Dissipation Ambient-Max":"2.5 W","Avalanche Energy Rating (Eas)":"172 mJ","Package Shape":"RECTANGULAR","Status":"TRANSFERRED","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"23 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.3600 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"80 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEM...