{"Category":"Discrete Semiconductor Products","FET Feature":"Logic Level Gate, 4V Drive","Product Photos":"MPT6 Series","Family":"FETs - Single","Vgs(th) (Max) @ Id":"2.5V @ 1mA","Input Capacitance (Ciss) @ Vds":"390pF @ 10V","Series":"-","Standard Package":"1","Supplier Device Package":"MPT6","Datasheets":"RP1E070XN","Rds On (Max) @ Id, Vgs":"28 mOhm @ 7A, 10V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Digi-Reel\u00ae","Power - Max":"2W","Package \/ Case":"6-SMD, Flat Leads","Mounting Type":"...

{"Category":"Discrete Semiconductor Products","FET Feature":"Logic Level Gate","Product Photos":"MPT6 Series","Family":"FETs - Single","Vgs(th) (Max) @ Id":"2.5V @ 1mA","Input Capacitance (Ciss) @ Vds":"440pF @ 10V","Series":"-","Standard Package":"1","Supplier Device Package":"MPT6","Datasheets":"RP1E090XN","Rds On (Max) @ Id, Vgs":"17 mOhm @ 9A, 10V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Digi-Reel\u00ae","Power - Max":"2W","Package \/ Case":"6-SMD, Flat Leads","Mounting Type":"Surface Mo...

{"Terminal Finish":"TIN COPPER","Terminal Form":"FLAT","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"7.5 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0270 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"30 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Br...

{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"4(A)","Mounting":"Surface Mount","Rad Hardened":"No","Drain-Source On-Volt":"30(V)","Packaging":"Tape and Reel","Power Dissipation":"1.25(W)","Operating Temp Range":"-55C to 150C","Package Type":"TSMT","Type":"Small Signal","Pin Count":"6","Number of Elements":"1"}...

{"Terminal Finish":"TIN COPPER","Terminal Form":"FLAT","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"6 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0320 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"24 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Brea...