{"Terminal Finish":"MATTE TIN","Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"2 W","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.5000 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"4 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"6 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdo...

{"Category":"Discrete Semiconductor Products","FET Feature":"Logic Level Gate","Vgs(th) (Max) @ Id":"2.4V @ 1mA","Other Drawings":"ZVN4206GV_footprnt","Package \/ Case":"TO-261-4, TO-261AA","Current - Continuous Drain (Id) @ 25\u00b0C":"500mA (Ta)","Gate Charge (Qg) @ Vgs":"-","Product Photos":"SOT-223","PCN Design\/Specification":"Date Code Mark Update 13\/Jan\/2015 Date Code Revision 01 13\/Jan\/2015","Rds On (Max) @ Id, Vgs":"4 Ohm @ 1A, 10V","Datasheets":"ZVN2110G","FET Type":"MOSFET N-Channel, Metal Ox...

{"Category":"Discrete Semiconductor Products","FET Feature":"Logic Level Gate","Product Photos":"SOT-223","Family":"FETs - Single","Vgs(th) (Max) @ Id":"2.4V @ 1mA","Series":"-","Standard Package":"4,000","Supplier Device Package":"SOT-223","Datasheets":"ZVN2110G","Rds On (Max) @ Id, Vgs":"4 Ohm @ 1A, 10V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Tape & Reel (TR)","Power - Max":"2W","Package \/ Case":"TO-261-4, TO-261AA","Mounting Type":"Surface Mount","Drain to Source Voltage (Vdss)":"100V",...

{"Polarity":"N","Continuous Drain Current":"0.5(A)","Mounting":"Surface Mount","Output Power (Max)":"Not Required W","Type":"Power MOSFET","Gate-Source Voltage (Max)":"'\u00b120(V)","Drain Efficiency":"Not Required %","Noise Figure":"Not Required dB","Operating Temperature Classification":"Military","Package Type":"SOT-223","Drain-Source On-Res":"4(ohm)","Frequency (Max)":"Not Required MHz","Power Gain ":"Not Required dB","Operating Temp Range":"-55C to 150C","Pin Count":"3 +Tab","Channel Mode":"Enhancement...