{"Status":"ACTIVE","Channel Type":"N-CHANNEL","Terminal Finish":"MATTE TIN","Package Body Material":"PLASTIC\/EPOXY","Mfr Package Description":"SOT-23, 3 PIN","Terminal Form":"GULL WING","Operating Mode":"ENHANCEMENT","Package Style":"SMALL OUTLINE","Drain Current-Max (ID)":"2 A","Transistor Application":"SWITCHING","Number of Elements":"1","Transistor Element Material":"SILICON","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"DUAL","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Package...

{"Category":"Discrete Semiconductor Products","FET Feature":"Logic Level Gate","Vgs(th) (Max) @ Id":"1V @ 250\u00b5A","Package \/ Case":"TO-236-3, SC-59, SOT-23-3","Current - Continuous Drain (Id) @ 25\u00b0C":"1.8A (Ta)","Gate Charge (Qg) @ Vgs":"3.9nC @ 10V","Product Photos":"SOT23","Rds On (Max) @ Id, Vgs":"120 mOhm @ 2.5A, 10V","Datasheets":"ZXMN3A01F","FET Type":"MOSFET N-Channel, Metal Oxide","Standard Package":"1","Drain to Source Voltage (Vdss)":"30V","RoHS Information":"RoHS Cert of Compliance","On...

{"Category":"Discrete Semiconductor Products","FET Feature":"Logic Level Gate","Product Photos":"SOT23","Family":"FETs - Single","Vgs(th) (Max) @ Id":"1V @ 250\u00b5A","Series":"-","Standard Package":"10,000","Supplier Device Package":"SOT-23-3","Datasheets":"ZXMN3A01F","Rds On (Max) @ Id, Vgs":"120 mOhm @ 2.5A, 10V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Tape & Reel (TR)","Power - Max":"625mW","Package \/ Case":"TO-236-3, SC-59, SOT-23-3","Mounting Type":"Surface Mount","Drain to Source Vo...

{"Polarity":"N","Continuous Drain Current":"1.8(A)","Mounting":"Surface Mount","Output Power (Max)":"Not Required W","Type":"Power MOSFET","Gate-Source Voltage (Max)":"'\u00b120(V)","Drain Efficiency":"Not Required %","Noise Figure":"Not Required dB","Operating Temperature Classification":"Military","Package Type":"SOT-23","Drain-Source On-Res":"0.12(ohm)","Frequency (Max)":"Not Required MHz","Power Gain ":"Not Required dB","Operating Temp Range":"-55C to 150C","Pin Count":"3","Channel Mode":"Enhancement","...