{"Category":"Discrete Semiconductor Products","FET Feature":"Logic Level Gate","Vgs(th) (Max) @ Id":"3V @ 250\u00b5A","Package \/ Case":"SOT-23-6","Current - Continuous Drain (Id) @ 25\u00b0C":"2.9A (Ta)","Gate Charge (Qg) @ Vgs":"15.8nC @ 10V","Rds On (Max) @ Id, Vgs":"80 mOhm @ 4A, 10V","Product Photos":"SOT-23-6 PKG","PCN Design\/Specification":"Leadframe Material Update 09\/Apr\/2014 Date Code Mark Update 13\/Jan\/2015 Date Code Revision 01 13\/Jan\/2015","PCN Other":"Copper Bond Wire and Wafer Source 0...

{"Polarity":"P","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Power Dissipation":"1.7(W)","Continuous Drain Current":"2.9(A)","Mounting":"Surface Mount","Rad Hardened":"No","Drain-Source On-Volt":"40(V)","Packaging":"Tape and Reel","Operating Temperature Classification":"Military","Operating Temp Range":"-55C to 150C","Package Type":"SOT-26","Type":"Power MOSFET","Pin Count":"6","Number of Elements":"1"}...