{"Category":"Discrete Semiconductor Products","FET Feature":"Logic Level Gate","Vgs(th) (Max) @ Id":"1V @ 250\u00b5A","Package \/ Case":"TO-261-4, TO-261AA","Current - Continuous Drain (Id) @ 25\u00b0C":"1.7A (Ta)","Gate Charge (Qg) @ Vgs":"5.9nC @ 10V","Product Photos":"SOT-223","PCN Design\/Specification":"Date Code Mark Update 13\/Jan\/2015 Date Code Revision 01 13\/Jan\/2015","Rds On (Max) @ Id, Vgs":"390 mOhm @ 900mA, 10V","Datasheets":"ZXMP6A13G","FET Type":"MOSFET P-Channel, Metal Oxide","Standard Pa...

{"Polarity":"P","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"1.7(A)","Mounting":"Surface Mount","Drain-Source On-Volt":"60(V)","Pin Count":"3 +Tab","Packaging":"Tape and Reel","Power Dissipation":"3.9(W)","Operating Temp Range":"-55C to 150C","Package Type":"SOT-223","Rad Hardened":"No","Type":"Small Signal","Drain-Source On-Res":"0.39(ohm)","Number of Elements":"1"}...