Dla.mil/2N6661+JAN
{"C(iss) Max. (F)":"50p","Absolute Max. Power Diss. (W)":"6.25","g(fs) Max, (S) Trans. conduct,":"195m","r(DS)on Max. (Ohms)":"4.0","@V(DS) (V) (Test Condition)":"25","I(GSS) Max. (A)":"100n","V(BR)GSS (V)":"30","@I(D) (A) (Test Condition)":"500m","@(VDS) (V) (Test Condition)":"30","Package":"TO-39","I(DSS) Min. (A)":"10u","Military":"Y","Mil Number":"JAN2N6661","t(r) Max. (s) Rise time":"5.0n","V(BR)DSS (V)":"90","t(f) Max. (s) Fall time.":"5.0n","g(fs) Min. (S) Trans. conduct.":"170m","I(D) Abs. Drain Cur...
1049 Bytes - 13:18:57, 29 March 2024
Dla.mil/2N6661+JANTX
{"C(iss) Max. (F)":"50p","Absolute Max. Power Diss. (W)":"6.25","g(fs) Max, (S) Trans. conduct,":"195m","r(DS)on Max. (Ohms)":"4.0","@V(DS) (V) (Test Condition)":"25","I(GSS) Max. (A)":"100n","V(BR)GSS (V)":"30","@I(D) (A) (Test Condition)":"500m","@(VDS) (V) (Test Condition)":"30","Package":"TO-39","I(DSS) Min. (A)":"10u","Military":"Y","Mil Number":"JANTX2N6661","t(r) Max. (s) Rise time":"5.0n","V(BR)DSS (V)":"90","t(f) Max. (s) Fall time.":"5.0n","g(fs) Min. (S) Trans. conduct.":"170m","I(D) Abs. Drain C...
1059 Bytes - 13:18:57, 29 March 2024
Dla.mil/2N6661+JANTXV
{"C(iss) Max. (F)":"50p","Absolute Max. Power Diss. (W)":"6.25","g(fs) Max, (S) Trans. conduct,":"195m","r(DS)on Max. (Ohms)":"4.0","@V(DS) (V) (Test Condition)":"25","I(GSS) Max. (A)":"100n","V(BR)GSS (V)":"30","@I(D) (A) (Test Condition)":"500m","@(VDS) (V) (Test Condition)":"30","Package":"TO-39","I(DSS) Min. (A)":"10u","Military":"Y","Mil Number":"JANTXV2N6661","t(r) Max. (s) Rise time":"5.0n","V(BR)DSS (V)":"90","t(f) Max. (s) Fall time.":"5.0n","g(fs) Min. (S) Trans. conduct.":"170m","I(D) Abs. Drain ...
1067 Bytes - 13:18:57, 29 March 2024
Microchip.com/2N6661
{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Vgs(th) (Max) @ Id":"2V @ 1mA","Package \/ Case":"TO-205AD, TO-39-3 Metal Can","Current - Continuous Drain (Id) @ 25\u00b0C":"350mA (Tj)","Gate Charge (Qg) @ Vgs":"-","Product Photos":"2N6661 VN2210N2","PCN Assembly\/Origin":"3L TO-39 Qualification Assembly Site Update 22\/Aug\/2014 Additional Fabrication Site 03\/Sep\/2014 Fab Site Addition 14\/Aug\/2014","Rds On (Max) @ Id, Vgs":"4 Ohm @ 1A, 10V","Datasheets":"2N6661","FET Type":"MOSF...
1769 Bytes - 13:18:57, 29 March 2024
Microchip_technology_inc_/2N6661
847 Bytes - 13:18:57, 29 March 2024
Semelab.co.uk/2N6661
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"WIRE","Power Dissipation Ambient-Max":"0.7250 W","Package Shape":"ROUND","Status":"ACTIVE","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.9000 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"4 ohm","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"90 V","Transistor Applicat...
1466 Bytes - 13:18:57, 29 March 2024
Semelab.co.uk/2N6661-220M
{"Status":"ACTIVE","Channel Type":"N-CHANNEL","Terminal Finish":"NOT SPECIFIED","Package Body Material":"METAL","Mfr Package Description":"TO-220M, 3 PIN","Terminal Form":"PIN\/PEG","Operating Mode":"ENHANCEMENT","Package Style":"FLANGE MOUNT","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.9000 A","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"SINGLE","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"SQUARE","Configuration":"SINGLE","Drain-source On Resistanc...
1303 Bytes - 13:18:57, 29 March 2024
Semelab.co.uk/2N6661-220MR1
{"Status":"ACTIVE","Lead Free":"Yes","Terminal Finish":"TIN SILVER COPPER","Package Body Material":"METAL","Mfr Package Description":"TO-220M, 3 PIN","Terminal Form":"PIN\/PEG","Operating Mode":"ENHANCEMENT","Package Style":"FLANGE MOUNT","Transistor Element Material":"SILICON","Channel Type":"N-CHANNEL","Drain Current-Max (ID)":"0.9000 A","EU RoHS Compliant":"Yes","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"SINGLE","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"SQUARE","Co...
1364 Bytes - 13:18:57, 29 March 2024
Semelab.co.uk/2N6661CSM4
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"NO LEAD","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.9000 A","Configuration":"SINGLE","Drain-source On Resistance-Max":"5.3 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"3 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"90 V","Transistor Appl...
1427 Bytes - 13:18:57, 29 March 2024
Semelab.co.uk/2N6661CSM4G4
{"Terminal Finish":"GOLD","Terminal Form":"NO LEAD","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.9000 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE","Drain-source On Resistance-Max":"5.3 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"3 A","Channel Type":"N-CHANNEL","China RoHS Compliant":"Yes","FET Technology":"METAL-OXIDE S...
1505 Bytes - 13:18:57, 29 March 2024
Semelab.co.uk/2N6661CSM4-JQR
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"NO LEAD","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.9000 A","Configuration":"SINGLE","Drain-source On Resistance-Max":"5.3 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"3 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"90 V","Transistor Appl...
1451 Bytes - 13:18:57, 29 March 2024
Semelab.co.uk/2N6661CSM4-JQR-A
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"NO LEAD","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.9000 A","Configuration":"SINGLE","Drain-source On Resistance-Max":"5.3 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"3 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"90 V","Transistor Appl...
1461 Bytes - 13:18:57, 29 March 2024
Semelab.co.uk/2N6661CSM4-JQR-AG4
{"Terminal Finish":"GOLD","Terminal Form":"NO LEAD","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.9000 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE","Drain-source On Resistance-Max":"5.3 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"3 A","Channel Type":"N-CHANNEL","China RoHS Compliant":"Yes","FET Technology":"METAL-OXIDE S...
1539 Bytes - 13:18:57, 29 March 2024
Semelab.co.uk/2N6661CSM4-JQR-B
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"NO LEAD","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.9000 A","Configuration":"SINGLE","Drain-source On Resistance-Max":"5.3 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"3 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"90 V","Transistor Appl...
1463 Bytes - 13:18:57, 29 March 2024
Semelab.co.uk/2N6661CSM4-JQR-B.01
718 Bytes - 13:18:57, 29 March 2024
Semelab.co.uk/2N6661CSM4-JQR-BG4
{"Terminal Finish":"GOLD","Terminal Form":"NO LEAD","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.9000 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE","Drain-source On Resistance-Max":"5.3 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"3 A","Channel Type":"N-CHANNEL","China RoHS Compliant":"Yes","FET Technology":"METAL-OXIDE S...
1537 Bytes - 13:18:57, 29 March 2024
Semelab.co.uk/2N6661CSM4-JQRG4
{"Terminal Finish":"GOLD","Terminal Form":"NO LEAD","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.9000 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE","Drain-source On Resistance-Max":"5.3 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"3 A","Channel Type":"N-CHANNEL","China RoHS Compliant":"Yes","FET Technology":"METAL-OXIDE S...
1528 Bytes - 13:18:57, 29 March 2024
Semelab.co.uk/2N6661CSM4-QR-B
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"NO LEAD","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.9000 A","Configuration":"SINGLE","Drain-source On Resistance-Max":"5.3 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"3 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"90 V","Transistor Appl...
1459 Bytes - 13:18:57, 29 March 2024
Semelab.co.uk/2N6661DCSM
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"NO LEAD","Power Dissipation Ambient-Max":"0.5000 W","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.9000 A","Configuration":"SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"4 ohm","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Bre...
1481 Bytes - 13:18:57, 29 March 2024
Semelab.co.uk/2N6661-JQR-A
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"WIRE","Package Shape":"ROUND","Status":"ACTIVE","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.9000 A","Configuration":"SINGLE","Drain-source On Resistance-Max":"4 ohm","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"90 V","Transistor Application":"SWITCHING","Case Connection":"DRAIN","Mfr Package Descrip...
1415 Bytes - 13:18:57, 29 March 2024
Semelab.co.uk/2N6661-JQR-AE4
{"Terminal Finish":"GOLD","Terminal Form":"WIRE","Package Shape":"ROUND","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.9000 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE","Drain-source On Resistance-Max":"4 ohm","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"90 V","Transistor Application":"SWITCHING","Case Conne...
1462 Bytes - 13:18:57, 29 March 2024
Semelab.co.uk/2N6661-JQR-B
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"WIRE","Package Shape":"ROUND","Status":"ACTIVE","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.9000 A","Configuration":"SINGLE","Drain-source On Resistance-Max":"4 ohm","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"90 V","Transistor Application":"SWITCHING","Case Connection":"DRAIN","Mfr Package Descrip...
1417 Bytes - 13:18:57, 29 March 2024
Semelab.co.uk/2N6661-JQR-BR1
{"Terminal Finish":"TIN SILVER COPPER","Terminal Form":"WIRE","Package Shape":"ROUND","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.9000 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE","Drain-source On Resistance-Max":"4 ohm","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Channel Type":"N-CHANNEL","China RoHS Compliant":"Yes","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"90 V","Trans...
1506 Bytes - 13:18:57, 29 March 2024
Semelab.co.uk/2N6661-LCC4
{"Status":"ACTIVE","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Mfr Package Description":"LCC4-15","Terminal Form":"NO LEAD","Operating Mode":"ENHANCEMENT","Package Style":"CHIP CARRIER","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.9000 A","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"QUAD","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"RECTANGULAR","Channel Type":"N-CHANNEL","Drain-source On Resistance-Max":"4 ohm","Number of Terminals":"15...
1261 Bytes - 13:18:57, 29 March 2024
Semelab.co.uk/2N6661LCC4-JQR-B
{"Status":"ACTIVE","Terminal Finish":"NOT SPECIFIED","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Mfr Package Description":"LCC4-15","Terminal Form":"NO LEAD","Operating Mode":"ENHANCEMENT","Package Style":"CHIP CARRIER","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.9000 A","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"QUAD","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"RECTANGULAR","Channel Type":"N-CHANNEL","Drain-source On Resistance-Max"...
1328 Bytes - 13:18:57, 29 March 2024
Semelab.co.uk/2N6661M1A
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"PIN\/PEG","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"1 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"4 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"3 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"90 V","Transistor Application":"...
1441 Bytes - 13:18:57, 29 March 2024
Semelab.co.uk/2N6661.MOD
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"WIRE","Power Dissipation Ambient-Max":"0.7250 W","Package Shape":"ROUND","Status":"ACTIVE","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.9000 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"4 ohm","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"90 V","Transistor Applicat...
1490 Bytes - 13:18:57, 29 March 2024
Semelab.co.uk/2N6661.MODR1
{"Terminal Finish":"TIN SILVER COPPER","Terminal Form":"WIRE","Package Shape":"ROUND","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.9000 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE","Drain-source On Resistance-Max":"4 ohm","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Channel Type":"N-CHANNEL","China RoHS Compliant":"Yes","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"90 V","Trans...
1492 Bytes - 13:18:57, 29 March 2024
Semelab.co.uk/2N6661-QR
{"Status":"ACTIVE","Channel Type":"N-CHANNEL","Terminal Finish":"NOT SPECIFIED","Package Body Material":"METAL","Mfr Package Description":"TO-220M, 3 PIN","Terminal Form":"PIN\/PEG","Operating Mode":"ENHANCEMENT","Package Style":"FLANGE MOUNT","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.9000 A","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"SINGLE","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"SQUARE","Configuration":"SINGLE","Drain-source On Resistanc...
1291 Bytes - 13:18:57, 29 March 2024
Semelab.co.uk/2N6661-QR-B
{"Status":"ACTIVE","Channel Type":"N-CHANNEL","Terminal Finish":"NOT SPECIFIED","Package Body Material":"METAL","Mfr Package Description":"TO-220M, 3 PIN","Terminal Form":"PIN\/PEG","Operating Mode":"ENHANCEMENT","Package Style":"FLANGE MOUNT","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.9000 A","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"SINGLE","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"SQUARE","Configuration":"SINGLE","Drain-source On Resistanc...
1300 Bytes - 13:18:57, 29 March 2024
Semelab.co.uk/2N6661-QR-BR1
{"Terminal Finish":"TIN SILVER COPPER","Terminal Form":"PIN\/PEG","Package Shape":"SQUARE","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.9000 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE","Drain-source On Resistance-Max":"4 ohm","Transistor Type":"GENERAL PURPOSE POWER","Channel Type":"N-CHANNEL","China RoHS Compliant":"Yes","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"90 V","Mfr Pac...
1393 Bytes - 13:18:57, 29 March 2024
Semelab.co.uk/2N6661-QRR1
{"Terminal Finish":"TIN SILVER COPPER","Terminal Form":"PIN\/PEG","Package Shape":"SQUARE","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.9000 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE","Drain-source On Resistance-Max":"4 ohm","Transistor Type":"GENERAL PURPOSE POWER","Channel Type":"N-CHANNEL","China RoHS Compliant":"Yes","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"90 V","Mfr Pac...
1382 Bytes - 13:18:57, 29 March 2024
Semelab.co.uk/2N6661R1
{"Terminal Finish":"TIN SILVER COPPER","Terminal Form":"WIRE","Power Dissipation Ambient-Max":"0.7250 W","Package Shape":"ROUND","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.9000 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"4 ohm","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Channel Type":"N-CHANNEL","China RoHS Compliant":"Yes","FET Technology":"META...
1554 Bytes - 13:18:57, 29 March 2024
Solid_state_manufacturing/2N6661
{"Category":"Power MOSFET","Dimensions":"9.39 x 9.01 x 4.58 mm","Maximum Continuous Drain Current":"\u00b10.9 A","Maximum Drain Source Voltage":"110 V","Package Type":"TO-205AF","Number of Elements per Chip":"1","Configuration":"Single","Maximum Operating Temperature":"+150 \u00b0C","Operating Temperature Range":"-55 to +150 \u00b0C","Typical Turn On Delay Time":"8 ns","Channel Type":"N","Typical Input Capacitance @ Vds":"50 pF","Typical TurnOff Delay Time":"10 ns","Pin Count":"3","Forward Transconductance"...
1714 Bytes - 13:18:57, 29 March 2024
Supertex.com/2N6661
{"Terminal Finish":"TIN LEAD","Terminal Form":"WIRE","Package Shape":"ROUND","Status":"ACTIVE","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.3500 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"4 ohm","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"90 V","Transistor Application":"SWITCHING","Case Connection":"DRAIN","Mfr ...
1394 Bytes - 13:18:57, 29 March 2024
Supertex.com/SX2N6661
{"Status":"ACTIVE","Terminal Finish":"NOT SPECIFIED","Package Body Material":"METAL","Channel Type":"N-CHANNEL","Terminal Form":"WIRE","Operating Mode":"ENHANCEMENT","Package Style":"CYLINDRICAL","Transistor Application":"SWITCHING","Feedback Cap-Max (Crss)":"10 pF","Drain Current-Max (ID)":"0.9000 A","Case Connection":"DRAIN","Transistor Element Material":"SILICON","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"BOTTOM","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Package Shape":"ROU...
1369 Bytes - 13:18:57, 29 March 2024
Vishay.com/2N6661
{"Category":"Discrete Semiconductor Products","FET Feature":"Logic Level Gate","Series":"-","Mounting Type":"Through Hole","Family":"FETs - Single","Vgs(th) (Max) @ Id":"2V @ 1mA","PCN Assembly\/Origin":"SIL-062-2014-Rev-0 30\/May\/2014","Package \/ Case":"TO-205AD, TO-39-3 Metal Can","Supplier Device Package":"TO-39","Datasheets":"2N6661(2)\/2N6661JANTX(V)","Rds On (Max) @ Id, Vgs":"4 Ohm @ 1A, 10V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Tube","Power - Max":"725mW","Standard Package":"100"...
1454 Bytes - 13:18:57, 29 March 2024
Vishay.com/2N6661-2
{"Category":"Discrete Semiconductor Products","FET Feature":"Logic Level Gate","Series":"-","Mounting Type":"Through Hole","Family":"FETs - Single","Vgs(th) (Max) @ Id":"2V @ 1mA","PCN Assembly\/Origin":"SIL-062-2014-Rev-0 30\/May\/2014","Package \/ Case":"TO-205AD, TO-39-3 Metal Can","Supplier Device Package":"TO-39","Datasheets":"2N6661(2)\/2N6661JANTX(V)","Rds On (Max) @ Id, Vgs":"4 Ohm @ 1A, 10V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Tube","Power - Max":"725mW","Standard Package":"20",...
1469 Bytes - 13:18:57, 29 March 2024
Vishay.com/2N6661-E3
{"Category":"Discrete Semiconductor Products","FET Feature":"Logic Level Gate","Series":"-","Mounting Type":"Through Hole","Family":"FETs - Single","Vgs(th) (Max) @ Id":"2V @ 1mA","PCN Assembly\/Origin":"SIL-062-2014-Rev-0 30\/May\/2014","Package \/ Case":"TO-205AD, TO-39-3 Metal Can","Supplier Device Package":"TO-39","Datasheets":"2N6661(2)\/2N6661JANTX(V)","Rds On (Max) @ Id, Vgs":"4 Ohm @ 1A, 10V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Tube","Power - Max":"725mW","Standard Package":"100"...
1470 Bytes - 13:18:57, 29 March 2024
Vishay.com/2N6661E3
{"Polarity":"N","Gate-Source Voltage (Max)":"\ufffd20 V","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Rad Hardened":"No","Mounting":"Through Hole","Noise Figure":"Not Required dB","Drain-Source On-Volt":"90 V","Frequency (Max)":"Not Required MHz","Drain-Source On-Res":"4 ohm","Power Dissipation":"0.725 W","Operating Temp Range":"-55C to 150C","Package Type":"TO-205AD","Output Power (Max)":"Not Required W","Pin Count":"3","Continuous Drain Current":"0.86 A","Power Gain ":"N...
1615 Bytes - 13:18:57, 29 March 2024
Vishay.com/2N6661JAN
{"Category":"MOSFET","Maximum Drain Source Voltage":"90 V","Description":"Value","Maximum Continuous Drain Current":"0.86 A","Package":"3TO-205AD","Mounting":"Through Hole","Maximum Gate Source Voltage":"\u00b120 V","Channel Mode":"Enhancement","Operating Temperature":"-55 to 125 \u00b0C","RDS-on":"4000@10V mOhm","Manufacturer":"Vishay \/ Siliconix"}...
1167 Bytes - 13:18:57, 29 March 2024
Vishay.com/2N6661JAN02
{"Category":"Discrete Semiconductor Products","FET Feature":"Logic Level Gate","Mounting Type":"Through Hole","Family":"FETs - Single","Vgs(th) (Max) @ Id":"2V @ 1mA","Series":"-","Package \/ Case":"TO-205AD, TO-39-3 Metal Can","Supplier Device Package":"TO-39","Datasheets":"2N6661(2)\/2N6661JANTX(V)","Rds On (Max) @ Id, Vgs":"4 Ohm @ 1A, 10V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Tube","Power - Max":"725mW","Standard Package":"20","Drain to Source Voltage (Vdss)":"90V","Current - Continuo...
1435 Bytes - 13:18:57, 29 March 2024
Vishay.com/2N6661JANTX
{"Category":"MOSFET","Maximum Drain Source Voltage":"90 V","Description":"Value","Maximum Continuous Drain Current":"0.86 A","Package":"3TO-205AD","Mounting":"Through Hole","Maximum Gate Source Voltage":"\u00b120 V","Channel Mode":"Enhancement","Operating Temperature":"-55 to 150 \u00b0C","RDS-on":"4000@10V mOhm","Manufacturer":"Vishay \/ Semiconductor"}...
1196 Bytes - 13:18:57, 29 March 2024
Vishay.com/2N6661JANTXV
{"Category":"MOSFET","Maximum Drain Source Voltage":"90 V","Description":"Value","Maximum Continuous Drain Current":"0.86 A","Package":"3TO-205AD","Mounting":"Through Hole","Maximum Gate Source Voltage":"\u00b120 V","Channel Mode":"Enhancement","Operating Temperature":"-55 to 150 \u00b0C","RDS-on":"4000@10V mOhm","Manufacturer":"Vishay \/ Siliconix"}...
1216 Bytes - 13:18:57, 29 March 2024
Vishay.com/2N6661JTVP02
{"Category":"Discrete Semiconductor Products","FET Feature":"Logic Level Gate","Mounting Type":"Through Hole","Family":"FETs - Single","Vgs(th) (Max) @ Id":"2V @ 1mA","Series":"-","Package \/ Case":"TO-205AD, TO-39-3 Metal Can","Supplier Device Package":"TO-39","Datasheets":"2N6661(2)\/2N6661JANTX(V)","Rds On (Max) @ Id, Vgs":"4 Ohm @ 1A, 10V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Tube","Power - Max":"725mW","Standard Package":"20","Drain to Source Voltage (Vdss)":"90V","Current - Continuo...
1442 Bytes - 13:18:57, 29 March 2024
Vishay.com/2N6661JTX02
{"Category":"Discrete Semiconductor Products","FET Feature":"Logic Level Gate","Mounting Type":"Through Hole","Family":"FETs - Single","Vgs(th) (Max) @ Id":"2V @ 1mA","Series":"-","Package \/ Case":"TO-205AD, TO-39-3 Metal Can","Supplier Device Package":"TO-39","Datasheets":"2N6661(2)\/2N6661JANTX(V)","Rds On (Max) @ Id, Vgs":"4 Ohm @ 1A, 10V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Tube","Power - Max":"725mW","Standard Package":"20","Drain to Source Voltage (Vdss)":"90V","Current - Continuo...
1435 Bytes - 13:18:57, 29 March 2024
Vishay.com/2N6661JTXL02
{"Category":"Discrete Semiconductor Products","FET Feature":"Logic Level Gate","Mounting Type":"Through Hole","Family":"FETs - Single","Vgs(th) (Max) @ Id":"2V @ 1mA","Series":"-","Package \/ Case":"TO-205AD, TO-39-3 Metal Can","Supplier Device Package":"TO-39","Datasheets":"2N6661(2)\/2N6661JANTX(V)","Rds On (Max) @ Id, Vgs":"4 Ohm @ 1A, 10V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Tube","Power - Max":"725mW","Standard Package":"20","Drain to Source Voltage (Vdss)":"90V","Current - Continuo...
1443 Bytes - 13:18:57, 29 March 2024
Vishay.com/2N6661JTXP02
{"Category":"Discrete Semiconductor Products","FET Feature":"Logic Level Gate","Mounting Type":"Through Hole","Family":"FETs - Single","Vgs(th) (Max) @ Id":"2V @ 1mA","Series":"-","Package \/ Case":"TO-205AD, TO-39-3 Metal Can","Supplier Device Package":"TO-39","Datasheets":"2N6661(2)\/2N6661JANTX(V)","Rds On (Max) @ Id, Vgs":"4 Ohm @ 1A, 10V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Tube","Power - Max":"725mW","Standard Package":"20","Drain to Source Voltage (Vdss)":"90V","Current - Continuo...
1442 Bytes - 13:18:57, 29 March 2024