{"Status":"Discontinued","@I(C) (A) (Test Condition)":"5.0","Absolute Max. Power Diss. (W)":"90","t(r) Max. (s) Rise time":"500n","I(CBO) Max. (A)":"1.0m","I(C) Abs.(A) Collector Current":"15","Semiconductor Material":"Silicon","t(f) Max. (s) Fall time.":"1.0u","@V(CE) (V) (Test Condition)":"5.0","V(BR)CEO (V)":"150","Package":"TO-3","h(FE) Min. Static Current Gain":"100","V(BR)CBO (V)":"150","Military":"N","t(s) Max. (s) Storage time.":"3.0u"}...

{"Status":"Discontinued","@I(C) (A) (Test Condition)":"5.0","Absolute Max. Power Diss. (W)":"80","t(r) Max. (s) Rise time":"350n","I(CBO) Max. (A)":"1.0m","I(C) Abs.(A) Collector Current":"10","Semiconductor Material":"Silicon","t(f) Max. (s) Fall time.":"1.0u","@V(CE) (V) (Test Condition)":"5.0","V(BR)CEO (V)":"150","Package":"TO-3","h(FE) Min. Static Current Gain":"100","V(BR)CBO (V)":"150","Military":"N","t(s) Max. (s) Storage time.":"2.5u"}...

{"@I(C) (A) (Test Condition)":"5.0","Absolute Max. Power Diss. (W)":"90","t(r) Max. (s) Rise time":"500n","I(CBO) Max. (A)":"1.0m","I(C) Abs.(A) Collector Current":"15","Semiconductor Material":"Silicon","t(f) Max. (s) Fall time.":"1.0u","@V(CE) (V) (Test Condition)":"5.0","V(BR)CEO (V)":"200","Package":"TO-3","h(FE) Min. Static Current Gain":"100","V(BR)CBO (V)":"200","Military":"N","t(s) Max. (s) Storage time.":"3.0u"}...

{"@I(C) (A) (Test Condition)":"5.0","Absolute Max. Power Diss. (W)":"90","t(r) Max. (s) Rise time":"500n","I(CBO) Max. (A)":"1.0m","I(C) Abs.(A) Collector Current":"15","Semiconductor Material":"Silicon","t(f) Max. (s) Fall time.":"1.0u","@V(CE) (V) (Test Condition)":"5.0","V(BR)CEO (V)":"250","Package":"TO-3","h(FE) Min. Static Current Gain":"100","V(BR)CBO (V)":"250","Military":"N","t(s) Max. (s) Storage time.":"3.0u"}...

{"@I(C) (A) (Test Condition)":"5.0","Absolute Max. Power Diss. (W)":"80","t(r) Max. (s) Rise time":"350n","I(CBO) Max. (A)":"1.0m","I(C) Abs.(A) Collector Current":"10","Semiconductor Material":"Silicon","t(f) Max. (s) Fall time.":"1.0u","@V(CE) (V) (Test Condition)":"5.0","V(BR)CEO (V)":"200","Package":"TO-3","h(FE) Min. Static Current Gain":"100","V(BR)CBO (V)":"200","Military":"N","t(s) Max. (s) Storage time.":"2.5u"}...

{"@I(C) (A) (Test Condition)":"5.0","Absolute Max. Power Diss. (W)":"80","t(r) Max. (s) Rise time":"350n","I(CBO) Max. (A)":"1.0m","I(C) Abs.(A) Collector Current":"10","Semiconductor Material":"Silicon","t(f) Max. (s) Fall time.":"1.0u","@V(CE) (V) (Test Condition)":"5.0","V(BR)CEO (V)":"250","Package":"TO-3","h(FE) Min. Static Current Gain":"100","V(BR)CBO (V)":"250","Military":"N","t(s) Max. (s) Storage time.":"2.5u"}...