Product Datasheet Search Results:
9 Pages, 738 KB, Original- FQD2N60C
- Fairchild Semiconductor Corporation
- 1.9 A, 600 V, 4.7 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252
9 Pages, 768 KB, Original- FQD2N60CTF
- Fairchild Semiconductor
- 600V N-Channel Advance QFET C-Series; Package: TO-252(DPAK); No of Pins: 2; Container: Tape & Reel
9 Pages, 768 KB, Original- FQD2N60CTF_F080
- Fairchild
- MOSFET N-CH 600V 1.9A DPAK - FQD2N60CTF_F080
9 Pages, 768 KB, Original- FQD2N60CTM
- Fairchild Semiconductor Corporation
- 1.9 A, 600 V, 4.7 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252
10 Pages, 1050 KB, Original- FQD2N60CTM_WS
- Fairchild Semiconductor
- MOSFET 600V 1.9A NCH MOSFET
11 Pages, 1209 KB, Original- FQD2N60CTMWS
- Fairchild Semiconductor
- FQD2N60CTMWS
7 Pages, 883 KB, Original- FQD2N60CTM
- On Semiconductor
- Trans MOSFET N-CH 600V 1.9A 3-Pin(2+Tab) DPAK T/R
11 Pages, 410 KB, Original- FQD2N60CTM-WS
- On Semiconductor
- FQD2N60CTM-WS
7 Pages, 883 KB, Original- FQD2N60CTM_WS
- On Semiconductor
- Trans MOSFET N-CH 600V 1.9A 3-Pin(2+Tab) DPAK T/R
Product Details Search Results:
Fairchildsemi.com/FQD2N60C
{"Terminal Finish":"MATTE TIN","Terminal Form":"GULL WING","Avalanche Energy Rating (Eas)":"120 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"1.9 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"4.7 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"7.6 A","Channel Type":"N-CHANNEL","FET Tech...
1598 Bytes - 12:51:46, 14 January 2026
Fairchildsemi.com/FQD2N60CTF
{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Product Photos":"TO-252-3","Family":"FETs - Single","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Series":"QFET\u00ae","Standard Package":"2,000","PCN Design/Specification":"Passivation Material 14/May/2008","Datasheets":"FQD2N60C, FQU2N60C D-PAK Tape and Reel Data","Rds On (Max) @ Id, Vgs":"4.7 Ohm @ 950mA, 10V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Tape & Reel (TR)","Power - Max":"2.5W","Mounting Type":"Surface Mount","Pac...
1787 Bytes - 12:51:46, 14 January 2026
Fairchildsemi.com/FQD2N60CTF_F080
{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Product Photos":"TO-252-3","Family":"FETs - Single","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Series":"QFET\u00ae","Standard Package":"2,000","Supplier Device Package":"D-Pak","Datasheets":"FQD2N60C, FQU2N60C","Rds On (Max) @ Id, Vgs":"4.7 Ohm @ 950mA, 10V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Tape & Reel (TR)","Power - Max":"2.5W","Package / Case":"TO-252-3, DPak (2 Leads + Tab), SC-63","Mounting Type":"Surface Mount",...
1634 Bytes - 12:51:46, 14 January 2026
Fairchildsemi.com/FQD2N60CTM
{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Package / Case":"TO-252-3, DPak (2 Leads + Tab), SC-63","Current - Continuous Drain (Id) @ 25\u00b0C":"1.9A (Tc)","Gate Charge (Qg) @ Vgs":"12nC @ 10V","Product Photos":"TO-252-3","PCN Design/Specification":"Passivation Material 14/May/2008","Product Training Modules":"High Voltage Switches for Power Processing","Rds On (Max) @ Id, Vgs":"4.7 Ohm @ 950mA, 10V","Datasheets":"FQD2N60C, FQU2N60C D-PAK ...
2100 Bytes - 12:51:46, 14 January 2026
Fairchildsemi.com/FQD2N60CTM_WS
{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Product Photos":"TO-252-3 QFET Series","Family":"FETs - Single","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Input Capacitance (Ciss) @ Vds":"235pF @ 25V","Series":"QFET\u00ae","Standard Package":"1","Supplier Device Package":"D-Pak","Datasheets":"FQD2N60C, FQU2N60C","Rds On (Max) @ Id, Vgs":"4.7 Ohm @ 950mA, 10V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Digi-Reel\u00ae","Power - Max":"2.5W","Package / Case":"TO-252-3, DPak (2...
1758 Bytes - 12:51:46, 14 January 2026
Fairchildsemi.com/FQD2N60CTMWS
741 Bytes - 12:51:46, 14 January 2026
Onsemi.com/FQD2N60CTM
{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b130(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"1.9(A)","Mounting":"Surface Mount","Rad Hardened":"No","Drain-Source On-Volt":"600(V)","Packaging":"Tape and Reel","Power Dissipation":"2.5(W)","Operating Temp Range":"-55C to 150C","Package Type":"DPAK","Type":"Power MOSFET","Pin Count":"2 +Tab","Number of Elements":"1"}...
1512 Bytes - 12:51:46, 14 January 2026
Onsemi.com/FQD2N60CTM-WS
856 Bytes - 12:51:46, 14 January 2026
Onsemi.com/FQD2N60CTM_WS
{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b130(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"1.9(A)","Mounting":"Surface Mount","Rad Hardened":"No","Drain-Source On-Volt":"600(V)","Packaging":"Tape and Reel","Power Dissipation":"2.5(W)","Operating Temp Range":"-55C to 150C","Package Type":"DPAK","Type":"Power MOSFET","Pin Count":"2 +Tab","Number of Elements":"1"}...
1514 Bytes - 12:51:46, 14 January 2026
Documentation and Support
Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:
| File Name | File Size (MB) | Document | MOQ | Support |
|---|---|---|---|---|
| IXGH72N60C3.pdf | 0.08 | 1 | Request | |
| IXGN72N60C3H1.pdf | 0.08 | 1 | Request | |
| IXGR72N60C3D1.pdf | 0.08 | 1 | Request | |
| IXGX72N60C3H1.pdf | 0.08 | 1 | Request | |
| SVFP12N60CFJD.pdf | 0.46 | 1 | Request | |
| SVF2N60CF.pdf | 0.55 | 1 | Request | |
| SVF2N60CN.pdf | 0.55 | 1 | Request | |
| SVF2N60CM.pdf | 0.55 | 1 | Request | |
| IXGT32N60C.pdf | 0.08 | 1 | Request | |
| IXGP12N60CD1.pdf | 0.07 | 1 | Request | |
| IXGR72N60C3D1.pdf | 0.21 | 1 | Request | |
| IXGH12N60C.pdf | 0.05 | 1 | Request |
