Gansystems.com/GS66506T-E01-TY
{"Mounting Style":"SMD\/SMT","Vds - Drain-Source Breakdown Voltage":"650 V","Transistor Polarity":"N-Channel","Rds On - Drain-Source Resistance":"73 mOhms","Channel Mode":"Enhancement","Brand":"GaN Systems","Id - Continuous Drain Current":"22 A","Vgs th - Gate-Source Threshold Voltage":"1.6 V","Packaging":"Tray","Product Category":"MOSFET","Qg - Gate Charge":"4.9 nC","Vgs - Gate-Source Breakdown Voltage":"+\/- 10 V","RoHS":"Details","Manufacturer":"GaN Systems"}...
1467 Bytes - 02:42:19, 30 April 2024