Did you mean: HN3C03F
Product Datasheet Search Results:
1 Pages, 132 KB, Scan- HN3C01FU(TE85L)
- Toshiba
- TRANS GP BJT NPN 20V 0.05A 6(2-2J1A) T/R
Product Details Search Results:
Toshiba.co.jp/HN3C02FTE85N
{"Status":"ACTIVE","Collector-base Capacitance-Max":"0.8500 pF","Package Body Material":"PLASTIC/EPOXY","Transistor Polarity":"NPN","Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"0.3000 W","Package Style":"SMALL OUTLINE","Collector Current-Max (IC)":"0.0500 A","Collector-emitter Voltage-Max":"15 V","Transistor Application":"AMPLIFIER","Transition Frequency-Nom (fT)":"2400 MHz","Highest Frequency Band":"ULTRA HIGH FREQUENCY BAND","Number of Elements":"2","Transistor Element Material":"SILICON",...
1456 Bytes - 11:30:18, 15 January 2026
Toshiba.co.jp/HN3C02FU
{"Terminal Finish":"TIN LEAD","Transistor Polarity":"NPN","Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"0.2000 W","Collector Current-Max (IC)":"0.0500 A","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Configuration":"SEPARATE, 2 ELEMENTS","Transistor Type":"RF SMALL SIGNAL","Collector-emitter Voltage-Max":"15 V","Terminal Position":"DUAL","Transistor Application":"AMPLIFIER","Surface Mount":"Yes","Collector-base...
1505 Bytes - 11:30:18, 15 January 2026
Toshiba.co.jp/HN3C03F
{"Terminal Finish":"TIN LEAD","Transistor Polarity":"NPN","Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"0.3000 W","Collector Current-Max (IC)":"0.0300 A","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Configuration":"SEPARATE, 2 ELEMENTS","Transistor Type":"RF SMALL SIGNAL","Collector-emitter Voltage-Max":"12 V","Terminal Position":"DUAL","Transistor Application":"AMPLIFIER","Surface Mount":"Yes","Collector-base...
1495 Bytes - 11:30:18, 15 January 2026
Toshiba.co.jp/HN3C03FTE85L
{"Status":"ACTIVE","Collector-base Capacitance-Max":"1.55 pF","Package Body Material":"PLASTIC/EPOXY","Transistor Polarity":"NPN","Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"0.3000 W","Package Style":"SMALL OUTLINE","Collector Current-Max (IC)":"0.0300 A","Collector-emitter Voltage-Max":"12 V","Transistor Application":"AMPLIFIER","Transition Frequency-Nom (fT)":"4000 MHz","Highest Frequency Band":"ULTRA HIGH FREQUENCY BAND","Number of Elements":"2","Transistor Element Material":"SILICON","T...
1456 Bytes - 11:30:18, 15 January 2026
Toshiba.co.jp/HN3C03FTE85N
{"Status":"ACTIVE","Collector-base Capacitance-Max":"1.55 pF","Package Body Material":"PLASTIC/EPOXY","Transistor Polarity":"NPN","Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"0.3000 W","Package Style":"SMALL OUTLINE","Collector Current-Max (IC)":"0.0300 A","Collector-emitter Voltage-Max":"12 V","Transistor Application":"AMPLIFIER","Transition Frequency-Nom (fT)":"4000 MHz","Highest Frequency Band":"ULTRA HIGH FREQUENCY BAND","Number of Elements":"2","Transistor Element Material":"SILICON","T...
1456 Bytes - 11:30:18, 15 January 2026
Toshiba.co.jp/HN3C03FTE85R
{"Status":"ACTIVE","Collector-base Capacitance-Max":"1.55 pF","Package Body Material":"PLASTIC/EPOXY","Transistor Polarity":"NPN","Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"0.3000 W","Package Style":"SMALL OUTLINE","Collector Current-Max (IC)":"0.0300 A","Collector-emitter Voltage-Max":"12 V","Transistor Application":"AMPLIFIER","Transition Frequency-Nom (fT)":"4000 MHz","Highest Frequency Band":"ULTRA HIGH FREQUENCY BAND","Number of Elements":"2","Transistor Element Material":"SILICON","T...
1454 Bytes - 11:30:18, 15 January 2026
Toshiba.co.jp/HN3C03FU
{"Terminal Finish":"TIN LEAD","Transistor Polarity":"NPN","Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"0.2000 W","Collector Current-Max (IC)":"0.0300 A","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Configuration":"SEPARATE, 2 ELEMENTS","Transistor Type":"RF SMALL SIGNAL","Collector-emitter Voltage-Max":"12 V","Terminal Position":"DUAL","Transistor Application":"AMPLIFIER","Surface Mount":"Yes","Collector-base...
1503 Bytes - 11:30:18, 15 January 2026
Toshiba.co.jp/HN3C09F
{"Terminal Finish":"TIN LEAD","Transistor Polarity":"NPN","Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"0.3000 W","Collector Current-Max (IC)":"0.0300 A","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Configuration":"SEPARATE, 2 ELEMENTS","Transistor Type":"RF SMALL SIGNAL","Collector-emitter Voltage-Max":"12 V","Terminal Position":"DUAL","Transistor Application":"AMPLIFIER","Surface Mount":"Yes","Collector-base...
1496 Bytes - 11:30:18, 15 January 2026
Toshiba.co.jp/HN3C09FU
{"Terminal Finish":"TIN LEAD","Transistor Polarity":"NPN","Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"0.2000 W","Collector Current-Max (IC)":"0.0300 A","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Configuration":"SEPARATE, 2 ELEMENTS","Transistor Type":"RF SMALL SIGNAL","Collector-emitter Voltage-Max":"12 V","Terminal Position":"DUAL","Transistor Application":"AMPLIFIER","Surface Mount":"Yes","Collector-base...
1504 Bytes - 11:30:18, 15 January 2026
