Product Datasheet Search Results:

IRFY140C.pdf7 Pages, 160 KB, Original
IRFY140C
International Rectifier
Trans MOSFET N-CH 100V 16A 3-Pin(3+Tab) TO-257
IRFY140CM.pdf7 Pages, 160 KB, Original
IRFY140CM
International Rectifier
Trans MOSFET N-CH 100V 16A 3-Pin(3+Tab) TO-257AA
IRFY140CMPBF.pdf6 Pages, 143 KB, Original
IRFY140CMPBF
International Rectifier
16 A, 100 V, 0.077 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-257AA
IRFY140CMSCS.pdf6 Pages, 143 KB, Original
IRFY140CMSCS
International Rectifier
16 A, 100 V, 0.077 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-257AA
IRFY140CMSCSPBF.pdf6 Pages, 143 KB, Original
IRFY140CMSCSPBF
International Rectifier
16 A, 100 V, 0.077 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-257AA
IRFY140CMSCV.pdf7 Pages, 160 KB, Original
IRFY140CMSCV
International Rectifier
Trans MOSFET N-CH 100V 16A 3-Pin(3+Tab) TO-257AA
IRFY140CMSCX.pdf7 Pages, 160 KB, Original
IRFY140CMSCX
International Rectifier
Trans MOSFET N-CH 100V 16A 3-Pin(3+Tab) TO-257
IRFY140CPBF.pdf7 Pages, 160 KB, Original
IRFY140CPBF
International Rectifier
16 A, 100 V, 0.077 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-257AA
IRFY140CSCV.pdf7 Pages, 160 KB, Original
IRFY140CSCV
International Rectifier
Trans MOSFET N-CH 100V 16A 3-Pin(3+Tab) TO-257
IRFY140CSCX.pdf7 Pages, 160 KB, Original
IRFY140CSCX
International Rectifier
Trans MOSFET N-CH 100V 16A 3-Pin(3+Tab) TO-257AA
IRFY140C.pdf1 Pages, 32 KB, Original
IRFY140C
N/a
Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.
IRFY140CM.pdf1 Pages, 32 KB, Original
IRFY140CM
N/a
Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.

Product Details Search Results:

Irf.com/IRFY140C
{"Terminal Finish":"TIN LEAD","Terminal Form":"PIN/PEG","Avalanche Energy Rating (Eas)":"230 mJ","Package Shape":"SQUARE","Status":"ACTIVE","Package Body Material":"UNSPECIFIED","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"16 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0770 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"64 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Vol...
1443 Bytes - 22:05:21, 16 January 2026
Irf.com/IRFY140CM
{"Terminal Finish":"TIN LEAD","Terminal Form":"PIN/PEG","Avalanche Energy Rating (Eas)":"230 mJ","Package Shape":"SQUARE","Status":"ACTIVE","Package Body Material":"UNSPECIFIED","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"16 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0770 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"64 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Vol...
1447 Bytes - 22:05:21, 16 January 2026
Irf.com/IRFY140CMPBF
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"PIN/PEG","Avalanche Energy Rating (Eas)":"230 mJ","Package Shape":"SQUARE","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"UNSPECIFIED","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"16 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0770 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"64 A","Channel Type":"N-CHANNEL","FET Technolo...
1516 Bytes - 22:05:21, 16 January 2026
Irf.com/IRFY140CMSCS
{"Terminal Finish":"TIN LEAD","Terminal Form":"PIN/PEG","Avalanche Energy Rating (Eas)":"230 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"UNSPECIFIED","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"16 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0770 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"100 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdo...
1473 Bytes - 22:05:21, 16 January 2026
Irf.com/IRFY140CMSCSPBF
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"PIN/PEG","Avalanche Energy Rating (Eas)":"230 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"UNSPECIFIED","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"16 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0770 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"100 A","Channel Type":"N-CHANNEL","FET Te...
1538 Bytes - 22:05:21, 16 January 2026
Irf.com/IRFY140CMSCV
{"Category":"MOSFET","Maximum Drain Source Voltage":"100 V","Typical Rise Time":"145(Max) ns","Typical Turn-Off Delay Time":"64(Max) ns","Description":"Value","Maximum Continuous Drain Current":"16 A","Package":"3TO-257AA","Mounting":"Through Hole","Maximum Gate Source Voltage":"\u00b120 V","Typical Turn-On Delay Time":"21(Max) ns","Channel Mode":"Enhancement","Operating Temperature":"-55 to 150 \u00b0C","RDS-on":"77@10V mOhm","Manufacturer":"International Rectifier","Typical Fall Time":"105(Max) ns"}...
1409 Bytes - 22:05:21, 16 January 2026
Irf.com/IRFY140CMSCX
{"Category":"MOSFET","Maximum Drain Source Voltage":"100 V","Typical Rise Time":"145(Max) ns","Typical Turn-Off Delay Time":"64(Max) ns","Description":"Value","Maximum Continuous Drain Current":"16 A","Package":"3TO-257","Mounting":"Through Hole","Maximum Gate Source Voltage":"\u00b120 V","Typical Turn-On Delay Time":"21(Max) ns","Channel Mode":"Enhancement","Operating Temperature":"-55 to 150 \u00b0C","RDS-on":"77@10V mOhm","Manufacturer":"International Rectifier","Typical Fall Time":"105(Max) ns"}...
1405 Bytes - 22:05:21, 16 January 2026
Irf.com/IRFY140CPBF
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"PIN/PEG","Avalanche Energy Rating (Eas)":"230 mJ","Package Shape":"SQUARE","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"UNSPECIFIED","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"16 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0770 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"64 A","Channel Type":"N-CHANNEL","FET Technolo...
1510 Bytes - 22:05:21, 16 January 2026
Irf.com/IRFY140CSCV
{"Category":"MOSFET","Maximum Drain Source Voltage":"100 V","Typical Rise Time":"145(Max) ns","Typical Turn-Off Delay Time":"64(Max) ns","Description":"Value","Maximum Continuous Drain Current":"16 A","Package":"3TO-257","Mounting":"Through Hole","Maximum Gate Source Voltage":"\u00b120 V","Typical Turn-On Delay Time":"21(Max) ns","Channel Mode":"Enhancement","Operating Temperature":"-55 to 150 \u00b0C","RDS-on":"77@10V mOhm","Manufacturer":"International Rectifier","Typical Fall Time":"105(Max) ns"}...
1398 Bytes - 22:05:21, 16 January 2026
Irf.com/IRFY140CSCX
{"Category":"MOSFET","Maximum Drain Source Voltage":"100 V","Typical Rise Time":"145(Max) ns","Typical Turn-Off Delay Time":"64(Max) ns","Description":"Value","Maximum Continuous Drain Current":"16 A","Package":"3TO-257AA","Mounting":"Through Hole","Maximum Gate Source Voltage":"\u00b120 V","Typical Turn-On Delay Time":"21(Max) ns","Channel Mode":"Enhancement","Operating Temperature":"-55 to 150 \u00b0C","RDS-on":"77@10V mOhm","Manufacturer":"International Rectifier","Typical Fall Time":"105(Max) ns"}...
1401 Bytes - 22:05:21, 16 January 2026
Semelab.co.uk/IRFY140C
{"Status":"ACTIVE","Terminal Finish":"NOT SPECIFIED","Package Body Material":"METAL","Channel Type":"N-CHANNEL","Pulsed Drain Current-Max (IDM)":"60 A","Terminal Form":"PIN/PEG","Operating Mode":"ENHANCEMENT","Package Style":"FLANGE MOUNT","Transistor Application":"SWITCHING","Drain Current-Max (ID)":"18 A","Case Connection":"ISOLATED","Transistor Element Material":"SILICON","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"SINGLE","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"S...
1361 Bytes - 22:05:21, 16 January 2026
Semelab.co.uk/IRFY140CR1
{"Terminal Finish":"TIN SILVER COPPER","Terminal Form":"PIN/PEG","Package Shape":"SQUARE","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"18 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE","Drain-source On Resistance-Max":"0.0920 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"60 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"100...
1422 Bytes - 22:05:21, 16 January 2026

Documentation and Support

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