{"Status":"ACTIVE","Channel Type":"N-CHANNEL","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Mfr Package Description":"HERMETIC SEALED, CASE IK, 2 PIN","Terminal Form":"FLAT","Operating Mode":"DEPLETION","Package Style":"FLANGE MOUNT","Transistor Application":"AMPLIFIER","Highest Frequency Band":"C BAND","Number of Elements":"1","Case Connection":"SOURCE","Transistor Element Material":"GALLIUM ARSENIDE","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"DUAL","Transistor Type":"RF P...

{"Status":"ACTIVE","Channel Type":"N-CHANNEL","Package Body Material":"PLASTIC\/EPOXY","Mfr Package Description":"PLASTIC, CASE I2C, 7 PIN","Terminal Form":"GULL WING","Operating Mode":"DEPLETION","Package Style":"SMALL OUTLINE","Drain Current-Max (ID)":"1.3 A","Transistor Application":"AMPLIFIER","Highest Frequency Band":"C BAND","Number of Elements":"1","Case Connection":"SOURCE","Transistor Element Material":"GALLIUM ARSENIDE","FET Technology":"JUNCTION","Terminal Position":"DUAL","Transistor Type":"RF P...

{"Status":"ACTIVE","Channel Type":"N-CHANNEL","Package Body Material":"PLASTIC\/EPOXY","Mfr Package Description":"PLASTIC, CASE I2C, 7 PIN","Terminal Form":"GULL WING","Operating Mode":"DEPLETION","Package Style":"SMALL OUTLINE","Drain Current-Max (ID)":"1.3 A","Transistor Application":"AMPLIFIER","Highest Frequency Band":"C BAND","Number of Elements":"1","Case Connection":"SOURCE","Transistor Element Material":"GALLIUM ARSENIDE","FET Technology":"JUNCTION","Terminal Position":"DUAL","Transistor Type":"RF P...

{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"FLAT","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Transistor Element Material":"GALLIUM ARSENIDE","Drain Current-Max (ID)":"3.8 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE","Transistor Type":"RF POWER","Channel Type":"N-CHANNEL","FET Technology":"JUNCTION","DS Breakdown Voltage-Min":"15 V","Transistor Application":"AMPLIFIER","Surface Mount":"Yes","Case Connection":"SOU...

{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"FLAT","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Transistor Element Material":"GALLIUM ARSENIDE","Drain Current-Max (ID)":"6 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE","Transistor Type":"RF POWER","Channel Type":"N-CHANNEL","FET Technology":"JUNCTION","DS Breakdown Voltage-Min":"15 V","Transistor Application":"AMPLIFIER","Surface Mount":"Yes","Case Connection":"SOURC...

{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"FLAT","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Transistor Element Material":"GALLIUM ARSENIDE","Drain Current-Max (ID)":"7.6 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE","Transistor Type":"RF POWER","Channel Type":"N-CHANNEL","FET Technology":"JUNCTION","DS Breakdown Voltage-Min":"15 V","Transistor Application":"AMPLIFIER","Surface Mount":"Yes","Case Connection":"SOU...

{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"FLAT","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Transistor Element Material":"GALLIUM ARSENIDE","Drain Current-Max (ID)":"1.3 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE","Transistor Type":"RF POWER","Channel Type":"N-CHANNEL","FET Technology":"JUNCTION","DS Breakdown Voltage-Min":"15 V","Transistor Application":"AMPLIFIER","Surface Mount":"Yes","Case Connection":"SOU...

{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"FLAT","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Transistor Element Material":"GALLIUM ARSENIDE","Drain Current-Max (ID)":"1.9 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE","Transistor Type":"RF POWER","Channel Type":"N-CHANNEL","FET Technology":"JUNCTION","DS Breakdown Voltage-Min":"15 V","Transistor Application":"AMPLIFIER","Surface Mount":"Yes","Case Connection":"SOU...

{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"FLAT","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Transistor Element Material":"GALLIUM ARSENIDE","Drain Current-Max (ID)":"2.6 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE","Transistor Type":"RF POWER","Channel Type":"N-CHANNEL","FET Technology":"JUNCTION","DS Breakdown Voltage-Min":"15 V","Transistor Application":"AMPLIFIER","Surface Mount":"Yes","Case Connection":"SOU...

{"Status":"CONSULT MFR","Channel Type":"N-CHANNEL","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Mfr Package Description":"HERMETIC SEALED, METAL CERAMIC PACKAGE-2","Terminal Form":"FLAT","Operating Mode":"DEPLETION","Package Style":"FLANGE MOUNT","Drain Current-Max (ID)":"3.8 A","Transistor Element Material":"GALLIUM ARSENIDE","Highest Frequency Band":"C BAND","Number of Elements":"1","Case Connection":"SOURCE","FET Technology":"JUNCTION","Terminal Position":"DUAL","Transistor Type":"RF POWER","...

{"Status":"TRANSFERRED","Channel Type":"N-CHANNEL","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Mfr Package Description":"HERMETIC SEALED, METAL CERAMIC, CASE IK, 3 PIN","Terminal Form":"FLAT","Operating Mode":"DEPLETION","Package Style":"FLANGE MOUNT","Drain Current-Max (ID)":"3.8 A","Transistor Application":"AMPLIFIER","Highest Frequency Band":"C BAND","Number of Elements":"1","Case Connection":"SOURCE","Transistor Element Material":"GALLIUM ARSENIDE","FET Technology":"JUNCTION","Terminal Posi...

{"Status":"CONSULT MFR","Channel Type":"N-CHANNEL","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Mfr Package Description":"HERMETIC SEALED, METAL CERAMIC PACKAGE-2","Terminal Form":"FLAT","Operating Mode":"DEPLETION","Package Style":"FLANGE MOUNT","Drain Current-Max (ID)":"6 A","Transistor Element Material":"GALLIUM ARSENIDE","Highest Frequency Band":"C BAND","Number of Elements":"1","Case Connection":"SOURCE","FET Technology":"JUNCTION","Terminal Position":"DUAL","Transistor Type":"RF POWER","Pa...

{"Status":"TRANSFERRED","Channel Type":"N-CHANNEL","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Mfr Package Description":"HERMETIC SEALED, METAL CERAMIC, CASE IK, 3 PIN","Terminal Form":"FLAT","Operating Mode":"DEPLETION","Package Style":"FLANGE MOUNT","Drain Current-Max (ID)":"6 A","Transistor Application":"AMPLIFIER","Highest Frequency Band":"C BAND","Number of Elements":"1","Case Connection":"SOURCE","Transistor Element Material":"GALLIUM ARSENIDE","FET Technology":"JUNCTION","Terminal Positi...

{"Status":"CONSULT MFR","Channel Type":"N-CHANNEL","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Mfr Package Description":"HERMETIC SEALED, METAL CERAMIC PACKAGE-2","Terminal Form":"FLAT","Operating Mode":"DEPLETION","Package Style":"FLANGE MOUNT","Drain Current-Max (ID)":"7.6 A","Transistor Element Material":"GALLIUM ARSENIDE","Highest Frequency Band":"C BAND","Number of Elements":"1","Case Connection":"SOURCE","FET Technology":"JUNCTION","Terminal Position":"DUAL","Transistor Type":"RF POWER","...

{"Status":"TRANSFERRED","Channel Type":"N-CHANNEL","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Mfr Package Description":"HERMETIC SEALED, METAL CERAMIC, CASE IK, 3 PIN","Terminal Form":"FLAT","Operating Mode":"DEPLETION","Package Style":"FLANGE MOUNT","Transistor Application":"AMPLIFIER","Highest Frequency Band":"C BAND","Number of Elements":"1","Case Connection":"SOURCE","Transistor Element Material":"GALLIUM ARSENIDE","FET Technology":"JUNCTION","Terminal Position":"DUAL","Transistor Type":"R...

{"Status":"CONSULT MFR","Channel Type":"N-CHANNEL","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Mfr Package Description":"HERMETIC SEALED, METAL CERAMIC PACKAGE-2","Terminal Form":"FLAT","Operating Mode":"DEPLETION","Package Style":"FLANGE MOUNT","Drain Current-Max (ID)":"9 A","Transistor Element Material":"GALLIUM ARSENIDE","Highest Frequency Band":"C BAND","Number of Elements":"1","Case Connection":"SOURCE","FET Technology":"JUNCTION","Terminal Position":"DUAL","Transistor Type":"RF POWER","Pa...

{"g(fs) Max, (S) Trans. conduct,":"850m","P(D) Max.(W) Power Dissipation":"21","V(BR)GSS (V)":"-5","@V(DS) (V) (Test Condition)":"3","@Temp (°C) (Test Condition)":"25","Operating Power Output Typ.(W)":"36","@I(D) (A) (Test Condition)":"1.4","@Freq. (Hz) (Test Condition)":"7.2G","Status":"Discontinued","Package":"RFMOD","I(DSS) Min. (A)":"2.2","V(GS)off Max. (V)":"-3","Power Gain Min. (dB)":"5","Semiconductor Material":"GaAs","I(DSS) Max. (A)":"2.8","V(BR)DSS (V)":"15","g(fs) Min. (S) Trans. conduct.":"...

{"Status":"CONSULT MFR","Channel Type":"N-CHANNEL","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Mfr Package Description":"HERMETIC SEALED, METAL CERAMIC PACKAGE-2","Terminal Form":"FLAT","Operating Mode":"DEPLETION","Package Style":"FLANGE MOUNT","Drain Current-Max (ID)":"1.3 A","Transistor Element Material":"GALLIUM ARSENIDE","Highest Frequency Band":"C BAND","Number of Elements":"1","Case Connection":"SOURCE","FET Technology":"JUNCTION","Terminal Position":"DUAL","Transistor Type":"RF POWER","...

{"Status":"CONSULT MFR","Channel Type":"N-CHANNEL","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Mfr Package Description":"HERMETIC SEALED, METAL CERAMIC PACKAGE-2","Terminal Form":"FLAT","Operating Mode":"DEPLETION","Package Style":"FLANGE MOUNT","Drain Current-Max (ID)":"1.3 A","Transistor Element Material":"GALLIUM ARSENIDE","Highest Frequency Band":"C BAND","Number of Elements":"1","Case Connection":"SOURCE","FET Technology":"JUNCTION","Terminal Position":"DUAL","Transistor Type":"RF POWER","...

{"Status":"CONSULT MFR","Channel Type":"N-CHANNEL","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Mfr Package Description":"HERMETIC SEALED, METAL CERAMIC PACKAGE-2","Terminal Form":"FLAT","Operating Mode":"DEPLETION","Package Style":"FLANGE MOUNT","Drain Current-Max (ID)":"1.3 A","Transistor Element Material":"GALLIUM ARSENIDE","Highest Frequency Band":"C BAND","Number of Elements":"1","Case Connection":"SOURCE","FET Technology":"JUNCTION","Terminal Position":"DUAL","Transistor Type":"RF POWER","...

{"@V(DS) (V) (Test Condition)":"3","Status":"Discontinued","V(GS)off Max. (V)":"-4","Semiconductor Material":"GaAs","I(DSS) Max. (A)":"4.4","I(DSS) Min. (A)":"3.2","Package":"RFMOD","V(BR)DSS (V)":"15","@I(D) (A) (Test Condition)":"1.6","P(D) Max.(W) Power Dissipation":"23","Operating Power Output Typ.(W)":"37","@Temp (°C) (Test Condition)":"25","I(D) Abs. Drain Current (A)":"4.4","V(BR)GSS (V)":"-5","g(fs) Min. (S) Trans. conduct.":"1.0"}...

{"@V(DS) (V) (Test Condition)":"3","Status":"Discontinued","V(GS)off Max. (V)":"-4","Semiconductor Material":"GaAs","I(DSS) Max. (A)":"4.4","I(DSS) Min. (A)":"3.2","Package":"RFMOD","V(BR)DSS (V)":"15","@I(D) (A) (Test Condition)":"1.6","P(D) Max.(W) Power Dissipation":"26","Operating Power Output Typ.(W)":"36","@Temp (°C) (Test Condition)":"25","I(D) Abs. Drain Current (A)":"4.4","V(BR)GSS (V)":"-5","g(fs) Min. (S) Trans. conduct.":"1.0"}...

{"@V(DS) (V) (Test Condition)":"3","Status":"Discontinued","V(GS)off Max. (V)":"-3","Power Gain Min. (dB)":"4.5","Semiconductor Material":"GaAs","I(DSS) Min. (A)":"4.4","Package":"RFMOD","V(BR)DSS (V)":"15","@I(D) (A) (Test Condition)":"2.2","g(fs) Min. (S) Trans. conduct.":"1.7","Operating Power Output Typ.(W)":"38","@Temp (°C) (Test Condition)":"25","P(D) Max.(W) Power Dissipation":"38","@Freq. (Hz) (Test Condition)":"7.2G","V(BR)GSS (V)":"-5"}...

{"Status":"CONSULT MFR","Channel Type":"N-CHANNEL","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Mfr Package Description":"HERMETIC SEALED, METAL CERAMIC PACKAGE-2","Terminal Form":"FLAT","Operating Mode":"DEPLETION","Package Style":"FLANGE MOUNT","Drain Current-Max (ID)":"1.9 A","Transistor Element Material":"GALLIUM ARSENIDE","Highest Frequency Band":"C BAND","Number of Elements":"1","Case Connection":"SOURCE","FET Technology":"JUNCTION","Terminal Position":"DUAL","Transistor Type":"RF POWER","...

{"Status":"TRANSFERRED","Channel Type":"N-CHANNEL","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Mfr Package Description":"HERMETIC SEALED, METAL CERAMIC, CASE IB, 3 PIN","Terminal Form":"FLAT","Operating Mode":"DEPLETION","Package Style":"FLANGE MOUNT","Transistor Application":"AMPLIFIER","Highest Frequency Band":"C BAND","Number of Elements":"1","Case Connection":"SOURCE","Transistor Element Material":"GALLIUM ARSENIDE","FET Technology":"JUNCTION","Terminal Position":"DUAL","Transistor Type":"R...

{"Status":"CONSULT MFR","Channel Type":"N-CHANNEL","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Mfr Package Description":"HERMETIC SEALED, METAL CERAMIC PACKAGE-2","Terminal Form":"FLAT","Operating Mode":"DEPLETION","Package Style":"FLANGE MOUNT","Drain Current-Max (ID)":"2.6 A","Transistor Element Material":"GALLIUM ARSENIDE","Highest Frequency Band":"C BAND","Number of Elements":"1","Case Connection":"SOURCE","FET Technology":"JUNCTION","Terminal Position":"DUAL","Transistor Type":"RF POWER","...

{"Status":"CONSULT MFR","Channel Type":"N-CHANNEL","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Mfr Package Description":"HERMETIC SEALED, METAL CERAMIC PACKAGE-2","Terminal Form":"FLAT","Operating Mode":"DEPLETION","Package Style":"FLANGE MOUNT","Drain Current-Max (ID)":"2.6 A","Transistor Element Material":"GALLIUM ARSENIDE","Highest Frequency Band":"C BAND","Number of Elements":"1","Case Connection":"SOURCE","FET Technology":"JUNCTION","Terminal Position":"DUAL","Transistor Type":"RF POWER","...

{"Status":"TRANSFERRED","Channel Type":"N-CHANNEL","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Mfr Package Description":"HERMETIC SEALED, METAL CERAMIC, CASE IB, 3 PIN","Terminal Form":"FLAT","Operating Mode":"DEPLETION","Package Style":"FLANGE MOUNT","Transistor Application":"AMPLIFIER","Highest Frequency Band":"C BAND","Number of Elements":"1","Case Connection":"SOURCE","Transistor Element Material":"GALLIUM ARSENIDE","FET Technology":"JUNCTION","Terminal Position":"DUAL","Transistor Type":"R...

{"Brand":"Honeywell","Operating Force":"0.5 N","Product Category":"Basic \/ Snap Action Switches","Manufacturer":"Honeywell"}...

{"Brand":"Honeywell","Operating Force":"0.5 N","Product Category":"Basic \/ Snap Action Switches","RoHS":"Details","Manufacturer":"Honeywell"}...

{"Brand":"Honeywell","Operating Force":"0.5 N","Product Category":"Basic \/ Snap Action Switches","Manufacturer":"Honeywell"}...

{"Brand":"Honeywell","Operating Force":"0.5 N","Product Category":"Basic \/ Snap Action Switches","Manufacturer":"Honeywell"}...

{"Brand":"Honeywell","Operating Force":"0.5 N","Product Category":"Basic \/ Snap Action Switches","RoHS":"Details","Manufacturer":"Honeywell"}...

{"Contact Arrangement":"SPDT","Push To Test Button":"No","Coil Suppression Diode":"No","Contact Current Rating":"10(A)","Contact Form":"1 Form C","Product Height (mm)":"81.3(mm)","Termination Style":"8-Pin Circular Plug","Rad Hardened":"No","Product Length (mm)":"60.7(mm)","Mounting Style":"Socket","Operating Temp Range":"-40C to 60C","Product Depth (mm)":"45.2(mm)","Coil Voltage AC":"200 TO 240","LED Indicator":"Yes","Type":"MONITORING RELAY","Pin Count":"8","Voltage Rating (VAC)":"240(V)"}...

{"Temperature Sensor Function":"Temp Sensor","Operating Supply Voltage (Min)":"3 V","Operating Temperature (Min)":"0C","Operating Temperature (Max)":"85C","Output Type":"Digital","Packaging":"Tape and Reel","Operating Temperature Classification":"Commercial","Rad Hardened":"No","Package Type":"LLP EP","Interface Type":"Serial (2-Wire)","Operating Supply Voltage (Max)":"3.6 V","Operating Supply Voltage (Typ)":"3.3 V","Resolution":"8\/10+Sign b"}...

{"Clock Frequency - Min. (Hz)":"300k","Number of Interrupt Lines":"2","Clock Frequency - Max. (Hz)":"4.1M","Package":"DIP","On-Chip ROM (bytes)":"2k","Max Instruction Length (bits)":"16","On-Chip RAM (Bytes)":"64","No. of I\/O Ports":"9","Number of Maskable Interrupts":"1","Technology":"NMOS","Pins":"42","Military":"N","Min Instruction Length (bits)":"8","Vsup Nom.(V) Supply Voltage":"5.0","No. of Non-Maskable Interrupts":"1"}...

{"Clock Frequency - Min. (Hz)":"300k","Number of Interrupt Lines":"2","Clock Frequency - Max. (Hz)":"4.0M","Package":"DIP","On-Chip ROM (bytes)":"2k","Max Instruction Length (bits)":"16","On-Chip RAM (Bytes)":"64","No. of I\/O Ports":"9","Number of Maskable Interrupts":"1","Technology":"NMOS","Pins":"42","Military":"N","Min Instruction Length (bits)":"8","Vsup Nom.(V) Supply Voltage":"5.0","No. of Non-Maskable Interrupts":"1"}...

{"Clock Frequency - Min. (Hz)":"620k","Number of Interrupt Lines":"1","Clock Frequency - Max. (Hz)":"1.0M","Package":"DIP","On-Chip ROM (bytes)":"2k","Max Instruction Length (bits)":"16","On-Chip RAM (Bytes)":"128","Number of I\/O Lines":"8","No. of I\/O Ports":"2","Number of Maskable Interrupts":"1","Technology":"NMOS","Pins":"28","Military":"N","Min Instruction Length (bits)":"8","Vsup Nom.(V) Supply Voltage":"6.5","No. of Non-Maskable Interrupts":"0"}...

{"Clock Frequency - Min. (Hz)":"620k","Number of Interrupt Lines":"1","Clock Frequency - Max. (Hz)":"1.0M","Package":"DIP","On-Chip ROM (bytes)":"1k","Max Instruction Length (bits)":"16","On-Chip RAM (Bytes)":"64","Number of I\/O Lines":"8","No. of I\/O Ports":"2","Number of Maskable Interrupts":"1","Technology":"NMOS","Pins":"28","Military":"N","Min Instruction Length (bits)":"8","Vsup Nom.(V) Supply Voltage":"6.5","No. of Non-Maskable Interrupts":"0"}...

{"Clock Frequency - Min. (Hz)":"620k","Clock Frequency - Max. (Hz)":"1.0M","Package":"DIP","On-Chip ROM (bytes)":"1k","Max Instruction Length (bits)":"16","On-Chip RAM (Bytes)":"64","No. of I\/O Ports":"5","Number of Maskable Interrupts":"1","Technology":"NMOS","Pins":"N\/A","Military":"N","Min Instruction Length (bits)":"8","Vsup Nom.(V) Supply Voltage":"6.5"}...

{"Status":"ACTIVE","Terminal Finish":"NOT SPECIFIED","Operating Temperature-Max":"85 Cel","Mfr Package Description":"AXIAL LEADED","Operating Temperature-Min":"-40 Cel","Terminal Shape":"WIRE","Mounting Feature":"THROUGH HOLE MOUNT","Negative Tolerance":"10 %","Capacitance":"0.0047 uF","Capacitor Type":"FILM\/FOIL","Manufacturer Series":"M310","Rated DC Voltage (URdc)":"500 V","Package Shape":"TUBULAR PACKAGE","Dielectric Material":"POLYESTER","Positive Tolerance":"10 %"}...

{"Mounting":"Surface Mount","Forward Transconductance (Typ)":"1.7(S)","Rad Hardened":"No","Packaging":"Tape and Reel","Operating Temp Range":"-40C to 175C","Drain Efficiency (Typ)":"36(%)","Package Type":"SMT","Drain Source Voltage (Max)":"15(V)","Screening Level":"Automotive","Pin Count":"7","Number of Elements":"1"}...

{"Mounting":"Surface Mount","Rad Hardened":"No","Frequency (Max)":"7200(MHz)","Packaging":"Tape and Reel","Application":"C-Band","Operating Temp Range":"-40C to 175C","Package Type":"SMD","Drain Source Voltage (Max)":"15(V)","Screening Level":"Automotive","Pin Count":"6 +Tab","Number of Elements":"1"}...

{"Polarization Mode":"Transmissv","Viewing Area Height (mm)":"155","Package":"N\/A","Package Style (Basic)":"Not Avail.","Type Code":"Field Effc","Vsup Min.(V) Supply Voltage":"5.0","Viewing Area Length (mm)":"205"}...