Mccsemi.com/2SA1162-GR-TP
{"Terminal Finish":"MATTE TIN","Transistor Polarity":"PNP","Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"0.1500 W","Collector Current-Max (IC)":"0.1500 A","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","EU RoHS Compliant":"Yes","Configuration":"SINGLE","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Collector-emitter Voltage-Max":"50 V","Terminal Position":"DUAL","Surface Mount":"Yes","Mfr Pa...
1465 Bytes - 05:33:29, 07 May 2024
Mccsemi.com/2SA1162-O-TP
{"Terminal Finish":"MATTE TIN","Transistor Polarity":"PNP","Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"0.1500 W","Collector Current-Max (IC)":"0.1500 A","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","EU RoHS Compliant":"Yes","Configuration":"SINGLE","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Collector-emitter Voltage-Max":"50 V","Terminal Position":"DUAL","Surface Mount":"Yes","Mfr Pa...
1458 Bytes - 05:33:29, 07 May 2024
Mccsemi.com/2SA1162-TP
{"Terminal Finish":"MATTE TIN","Transistor Polarity":"PNP","Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"0.1500 W","Collector Current-Max (IC)":"0.1500 A","Package Shape":"RECTANGULAR","Status":"ACTIVE-UNCONFIRMED","Lead Free":"Yes","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","EU RoHS Compliant":"Yes","Configuration":"SINGLE","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Collector-emitter Voltage-Max":"50 V","Terminal Position":"DUAL","Surface Mount":"...
1440 Bytes - 05:33:29, 07 May 2024
Mccsemi.com/2SA1162-Y-TP
{"Terminal Finish":"MATTE TIN","Transistor Polarity":"PNP","Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"0.1500 W","Collector Current-Max (IC)":"0.1500 A","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","EU RoHS Compliant":"Yes","Configuration":"SINGLE","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Collector-emitter Voltage-Max":"50 V","Terminal Position":"DUAL","Surface Mount":"Yes","Mfr Pa...
1461 Bytes - 05:33:29, 07 May 2024
N_a/2SA1162
{"Category":"PNP Transistor, Transistor","Amps":"0.15A","MHz":">80 MHz","Volts":"50V"}...
523 Bytes - 05:33:29, 07 May 2024
Onsemi.com/2SA1162GT1
{"Category":"Discrete Semiconductor Products","Current - Collector (Ic) (Max)":"150mA","DC Current Gain (hFE) (Min) @ Ic, Vce":"200 @ 2mA, 6V","Transistor Type":"PNP","Product Photos":"SOT-23-3","Family":"Transistors (BJT) - Single","Vce Saturation (Max) @ Ib, Ic":"300mV @ 10mA, 100mA","Current - Collector Cutoff (Max)":"100nA","Series":"-","Standard Package":"3,000","Voltage - Collector Emitter Breakdown (Max)":"50V","Supplier Device Package":"SC-59","Packaging":"Tape & Reel (TR)","Datasheets":"2SA1162GT1,...
1596 Bytes - 05:33:29, 07 May 2024
Onsemi.com/2SA1162YT1
{"Category":"Discrete Semiconductor Products","Current - Collector (Ic) (Max)":"150mA","DC Current Gain (hFE) (Min) @ Ic, Vce":"120 @ 2mA, 6V","Transistor Type":"PNP","Product Photos":"SOT-23-3","Family":"Transistors (BJT) - Single","Vce Saturation (Max) @ Ib, Ic":"300mV @ 10mA, 100mA","Current - Collector Cutoff (Max)":"100nA","Series":"-","Standard Package":"3,000","Voltage - Collector Emitter Breakdown (Max)":"50V","Supplier Device Package":"SC-59","Packaging":"Tape & Reel (TR)","Datasheets":"2SA1162GT1,...
1596 Bytes - 05:33:29, 07 May 2024
Toshiba.co.jp/2SA1162
{"Status":"ACTIVE","Terminal Finish":"NOT SPECIFIED","Package Body Material":"PLASTIC\/EPOXY","Mfr Package Description":"2-3F1A, SC-59, TO-236MOD, 3 PIN","Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"0.1500 W","Package Style":"SMALL OUTLINE","DC Current Gain-Min (hFE)":"70","Collector Current-Max (IC)":"0.1500 A","Collector-emitter Voltage-Max":"50 V","Transistor Application":"AMPLIFIER","Transition Frequency-Nom (fT)":"80 MHz","Number of Elements":"1","Transistor Element Material":"SILICON",...
1452 Bytes - 05:33:29, 07 May 2024
Toshiba.co.jp/2SA1162BL
{"V(CE)sat Max.(V)":"300m","Absolute Max. Power Diss. (W)":"150m","V(BR)CBO (V)":"50","@V(CB) (V) (Test Condition)":"10","h(FE) Min. Static Current Gain":"350","I(C) Abs.(A) Collector Current":"150m","h(FE) Max. Current gain.":"700","@Freq. (Hz) (Test Condition)":"1.0M","I(CBO) Max. (A)":"100n","@V(CBO) (V) (Test Condition)":"50","Package":"SOT-23","f(T) Min. (Hz) Transition Freq":"80M","@V(CE) (V) (Test Condition)":"10","@I(B) (A) (Test Condition)":"10m","V(BR)CEO (V)":"50","Military":"N","@I(C) (A) (Test ...
1020 Bytes - 05:33:29, 07 May 2024
Toshiba.co.jp/2SA1162-GR
{"Status":"ACTIVE","Terminal Finish":"NOT SPECIFIED","Package Body Material":"PLASTIC\/EPOXY","Mfr Package Description":"2-3F1A, SC-59, TO-236MOD, 3 PIN","Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"0.1500 W","Package Style":"SMALL OUTLINE","DC Current Gain-Min (hFE)":"200","Collector Current-Max (IC)":"0.1500 A","Collector-emitter Voltage-Max":"50 V","Transistor Application":"AMPLIFIER","Transition Frequency-Nom (fT)":"80 MHz","Number of Elements":"1","Transistor Element Material":"SILICON"...
1471 Bytes - 05:33:29, 07 May 2024
Toshiba.co.jp/2SA1162GR
{"V(CE)sat Max.(V)":"300m","Absolute Max. Power Diss. (W)":"150m","V(BR)CBO (V)":"50","@V(CB) (V) (Test Condition)":"10","h(FE) Min. Static Current Gain":"200","I(C) Abs.(A) Collector Current":"150m","h(FE) Max. Current gain.":"400","@Freq. (Hz) (Test Condition)":"1.0M","I(CBO) Max. (A)":"100n","@V(CBO) (V) (Test Condition)":"50","Package":"SOT-23","f(T) Min. (Hz) Transition Freq":"80M","@V(CE) (V) (Test Condition)":"10","@I(B) (A) (Test Condition)":"10m","V(BR)CEO (V)":"50","Military":"N","@I(C) (A) (Test ...
1020 Bytes - 05:33:29, 07 May 2024
Toshiba.co.jp/2SA1162-GR(F)
{"Collector Current (DC) ":"0.15 A","Transistor Polarity":"PNP","Collector Current (DC) (Max)":"0.15 A","Collector-Emitter Voltage":"50 V","Mounting":"Surface Mount","Emitter-Base Voltage":"5 V","Category ":"Bipolar Small Signal","Operating Temperature Classification":"Military","Power Dissipation":"0.15 W","Operating Temp Range":"-55C to 125C","Frequency":"80 MHz","Package Type":"SMini","Collector-Base Voltage":"50 V","Rad Hardened":"No","DC Current Gain":"200","Pin Count":"3","Number of Elements":"1"}...
1538 Bytes - 05:33:29, 07 May 2024
Toshiba.co.jp/2SA1162-GR,LF
{"Emitter- Base Voltage VEBO":"5 V","Gain Bandwidth Product fT":"80 MHz","Product Category":"Bipolar Transistors - BJT","Transistor Polarity":"PNP","Minimum Operating Temperature":"- 55 C","Factory Pack Quantity":"3000","DC Collector\/Base Gain hfe Min":"70","DC Current Gain hFE Max":"400","Collector-Emitter Saturation Voltage":"0.1 V","Collector- Emitter Voltage VCEO Max":"50 V","Packaging":"Reel","Collector- Base Voltage VCBO":"50 V","Mounting Style":"SMD\/SMT","Pd - Power Dissipation":"150 mW","Package \...
1952 Bytes - 05:33:29, 07 May 2024
Toshiba.co.jp/2SA1162-GR,LF(B
{"Collector Current (DC) ":"0.15(A)","Transistor Polarity":"PNP","Power Dissipation":"0.15(W)","Operating Temperature Classification":"Military","Mounting":"Surface Mount","Emitter-Base Voltage":"5(V)","Rad Hardened":"No","Packaging":"Tape and Reel","Category ":"Bipolar Small Signal","Operating Temp Range":"-55C to 125C","Frequency":"80(MHz)","Package Type":"SMini","Collector-Base Voltage":"50(V)","DC Current Gain":"200","Output Power":"Not Required(W)","Configuration":"Single","Pin Count":"3","Number of E...
1625 Bytes - 05:33:29, 07 May 2024
Toshiba.co.jp/2SA1162-GR,LF(T
{"Collector Current (DC) ":"0.15(A)","Configuration":"Single","Transistor Polarity":"PNP","Category ":"Bipolar Small Signal","Mounting":"Surface Mount","Emitter-Base Voltage":"5(V)","Collector-Emitter Voltage":"50(V)","Rad Hardened":"No","Packaging":"Tape and Reel","Operating Temperature Classification":"Military","Operating Temp Range":"-55C to 125C","Frequency":"80(MHz)","Package Type":"SMini","Collector-Base Voltage":"50(V)","Output Power":"Not Required(W)","Power Dissipation":"0.15(W)","Pin Count":"3","...
1645 Bytes - 05:33:29, 07 May 2024
Toshiba.co.jp/2SA1162-GR(T5L,F,T
{"Collector Current (DC) ":"0.15 A","Operating Temperature Classification":"Military","Transistor Polarity":"PNP","Collector Current (DC) (Max)":"0.15 A","Collector-Emitter Voltage":"50 V","Mounting":"Surface Mount","Emitter-Base Voltage":"5 V","Category ":"Bipolar Small Signal","Packaging":"Tape and Reel","Power Dissipation":"0.15 W","Operating Temp Range":"-55C to 125C","Frequency":"80 MHz","Package Type":"SMini","Collector-Base Voltage":"50 V","Rad Hardened":"No","DC Current Gain":"200","Pin Count":"3","...
1590 Bytes - 05:33:29, 07 May 2024
Toshiba.co.jp/2SA1162-GR(T5L,F,T)
{"Rad Hardened":"No","Collector Current (DC) ":"0.15 A","Transistor Polarity":"PNP","Collector-Emitter Voltage":"50 V","Operating Temperature Classification":"Military","Mounting":"Surface Mount","Emitter-Base Voltage":"5 V","Category ":"Bipolar Small Signal","Packaging":"Tape and Reel","Power Dissipation":"0.15 W","Operating Temp Range":"-55C to 125C","Frequency":"80 MHz","Package Type":"SMini","Collector-Base Voltage":"50 V","DC Current Gain":"200","Pin Count":"3","Number of Elements":"1"}...
1555 Bytes - 05:33:29, 07 May 2024
Toshiba.co.jp/2SA1162-GR(TE85,F)
{"Collector Current (DC) ":"0.15(A)","Configuration":"Single","Transistor Polarity":"PNP","Operating Temperature Classification":"Military","Mounting":"Surface Mount","Emitter-Base Voltage":"5(V)","Rad Hardened":"No","Packaging":"Tape and Reel","Category ":"Bipolar Small Signal","Operating Temp Range":"-55C to 125C","Frequency":"80(MHz)","Package Type":"SMini","Collector-Base Voltage":"50(V)","DC Current Gain":"200","Output Power":"Not Required(W)","Power Dissipation":"0.15(W)","Pin Count":"3","Number of E...
1639 Bytes - 05:33:29, 07 May 2024
Toshiba.co.jp/2SA1162GRTE85L
{"Status":"ACTIVE","Terminal Finish":"TIN LEAD","Package Body Material":"PLASTIC\/EPOXY","Transistor Polarity":"PNP","Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"0.1500 W","Package Style":"SMALL OUTLINE","DC Current Gain-Min (hFE)":"200","Collector Current-Max (IC)":"0.1500 A","Collector-emitter Voltage-Max":"50 V","Transistor Application":"AMPLIFIER","Transition Frequency-Nom (fT)":"80 MHz","Number of Elements":"1","Transistor Element Material":"SILICON","Terminal Position":"DUAL","Transist...
1429 Bytes - 05:33:29, 07 May 2024
Toshiba.co.jp/2SA1162-GR(TE85L,F
{"Rad Hardened":"No","Collector Current (DC) ":"0.15 A","Transistor Polarity":"PNP","Collector-Emitter Voltage":"50 V","Operating Temperature Classification":"Military","Mounting":"Surface Mount","Emitter-Base Voltage":"5 V","Category ":"Bipolar Small Signal","Packaging":"Tape and Reel","Power Dissipation":"0.15 W","Operating Temp Range":"-55C to 125C","Frequency":"80 MHz","Package Type":"SMini","Collector-Base Voltage":"50 V","DC Current Gain":"200","Pin Count":"3","Number of Elements":"1"}...
1602 Bytes - 05:33:29, 07 May 2024
Toshiba.co.jp/2SA1162-GR(TE85L,F)
{"Collector Current (DC) ":"0.15(A)","Operating Temperature Classification":"Military","Configuration":"Single","Transistor Polarity":"PNP","Collector Current (DC) (Max)":"0.15 A","Collector-Emitter Voltage":"50(V)","Mounting":"Surface Mount","Emitter-Base Voltage":"5(V)","Category ":"Bipolar Small Signal","DC Current Gain (Min)":"200","Packaging":"Tape and Reel","Power Dissipation":"0.15(W)","Operating Temp Range":"-55C to 125C","Frequency":"80(MHz)","Package Type":"SMini","Collector-Base Voltage":"50(V)",...
1747 Bytes - 05:33:29, 07 May 2024
Toshiba.co.jp/2SA1162-GR(TE85L.F
{"Collector Current (DC) ":"0.15(A)","Configuration":"Single","Transistor Polarity":"PNP","Operating Temperature Classification":"Military","Mounting":"Surface Mount","Emitter-Base Voltage":"5(V)","Rad Hardened":"No","Packaging":"Tape and Reel","Category ":"Bipolar Small Signal","Operating Temp Range":"-55C to 125C","Frequency":"80(MHz)","Package Type":"SMini","Collector-Base Voltage":"50(V)","DC Current Gain":"200","Output Power":"Not Required(W)","Power Dissipation":"0.15(W)","Pin Count":"3","Number of E...
1638 Bytes - 05:33:29, 07 May 2024
Toshiba.co.jp/2SA1162-GRTE85LF
849 Bytes - 05:33:29, 07 May 2024
Toshiba.co.jp/2SA1162-O
{"Status":"ACTIVE","Terminal Finish":"NOT SPECIFIED","Package Body Material":"PLASTIC\/EPOXY","Mfr Package Description":"2-3F1A, SC-59, TO-236MOD, 3 PIN","Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"0.1500 W","Package Style":"SMALL OUTLINE","DC Current Gain-Min (hFE)":"70","Collector Current-Max (IC)":"0.1500 A","Collector-emitter Voltage-Max":"50 V","Transistor Application":"AMPLIFIER","Transition Frequency-Nom (fT)":"80 MHz","Number of Elements":"1","Transistor Element Material":"SILICON",...
1462 Bytes - 05:33:29, 07 May 2024
Toshiba.co.jp/2SA1162-O(F)
{"Collector Current (DC) ":"0.15(A)","Transistor Polarity":"PNP","DC Current Gain":"70@2MA@6V","Collector-Emitter Voltage":"50(V)","Mounting":"Surface Mount","Emitter-Base Voltage":"5(V)","Category ":"Bipolar Small Signal","Operating Temperature Classification":"Military","Power Dissipation":"0.15(W)","Operating Temp Range":"-55C to 125C","Frequency":"80(MHz)","Package Type":"SMini","Collector-Base Voltage":"50(V)","Rad Hardened":"No","Output Power":"Not Required(W)","Configuration":"Single","Pin Count":"3"...
1621 Bytes - 05:33:29, 07 May 2024
Toshiba.co.jp/2SA1162-O,LF
{"Packaging":"Reel","Collector-Emitter Saturation Voltage":"- 0.3 V","Product Category":"Bipolar Transistors - BJT","Transistor Polarity":"PNP","Brand":"Toshiba","Package \/ Case":"TO-236MOD","Gain Bandwidth Product fT":"80 MHz","Collector- Emitter Voltage VCEO Max":"- 50 V","Pd - Power Dissipation":"150 mW","Emitter- Base Voltage VEBO":"- 5 V","Collector- Base Voltage VCBO":"- 50 V","Mounting Style":"SMD\/SMT","Maximum DC Collector Current":"- 150 mA","RoHS":"Details","Manufacturer":"Toshiba"}...
1584 Bytes - 05:33:29, 07 May 2024
Toshiba.co.jp/2SA1162-OTE85L
{"Status":"ACTIVE","Terminal Finish":"NOT SPECIFIED","Package Body Material":"PLASTIC\/EPOXY","Transistor Polarity":"PNP","Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"0.1500 W","Package Style":"SMALL OUTLINE","DC Current Gain-Min (hFE)":"70","Collector Current-Max (IC)":"0.1500 A","Collector-emitter Voltage-Max":"50 V","Transistor Application":"AMPLIFIER","Transition Frequency-Nom (fT)":"80 MHz","Number of Elements":"1","Transistor Element Material":"SILICON","Terminal Position":"DUAL","Tran...
1431 Bytes - 05:33:29, 07 May 2024
Toshiba.co.jp/2SA1162OTE85L
{"Status":"ACTIVE","Terminal Finish":"NOT SPECIFIED","Package Body Material":"PLASTIC\/EPOXY","Transistor Polarity":"PNP","Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"0.1500 W","Package Style":"SMALL OUTLINE","DC Current Gain-Min (hFE)":"70","Collector Current-Max (IC)":"0.1500 A","Collector-emitter Voltage-Max":"50 V","Transistor Application":"AMPLIFIER","Transition Frequency-Nom (fT)":"80 MHz","Number of Elements":"1","Transistor Element Material":"SILICON","Terminal Position":"DUAL","Tran...
1427 Bytes - 05:33:29, 07 May 2024
Toshiba.co.jp/2SA1162-O(TE85L,F)
{"Emitter- Base Voltage VEBO":"5 V","Gain Bandwidth Product fT":"80 MHz","Product Category":"Bipolar Transistors - BJT","Transistor Polarity":"PNP","Minimum Operating Temperature":"- 55 C","Factory Pack Quantity":"3000","DC Collector\/Base Gain hfe Min":"70","DC Current Gain hFE Max":"400","Collector-Emitter Saturation Voltage":"0.1 V","Collector- Emitter Voltage VCEO Max":"50 V","Packaging":"Reel","Collector- Base Voltage VCBO":"50 V","Mounting Style":"SMD\/SMT","Pd - Power Dissipation":"150 mW","Package \...
1959 Bytes - 05:33:29, 07 May 2024
Toshiba.co.jp/2SA1162-O(TE85L,F)""
1072 Bytes - 05:33:29, 07 May 2024
Toshiba.co.jp/2SA1162-OTE85R
{"Status":"ACTIVE","Terminal Finish":"NOT SPECIFIED","Package Body Material":"PLASTIC\/EPOXY","Transistor Polarity":"PNP","Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"0.1500 W","Package Style":"SMALL OUTLINE","DC Current Gain-Min (hFE)":"70","Collector Current-Max (IC)":"0.1500 A","Collector-emitter Voltage-Max":"50 V","Transistor Application":"AMPLIFIER","Transition Frequency-Nom (fT)":"80 MHz","Number of Elements":"1","Transistor Element Material":"SILICON","Terminal Position":"DUAL","Tran...
1429 Bytes - 05:33:29, 07 May 2024
Toshiba.co.jp/2SA1162OTE85R
{"Status":"ACTIVE","Terminal Finish":"NOT SPECIFIED","Package Body Material":"PLASTIC\/EPOXY","Transistor Polarity":"PNP","Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"0.1500 W","Package Style":"SMALL OUTLINE","DC Current Gain-Min (hFE)":"70","Collector Current-Max (IC)":"0.1500 A","Collector-emitter Voltage-Max":"50 V","Transistor Application":"AMPLIFIER","Transition Frequency-Nom (fT)":"80 MHz","Number of Elements":"1","Transistor Element Material":"SILICON","Terminal Position":"DUAL","Tran...
1425 Bytes - 05:33:29, 07 May 2024
Toshiba.co.jp/2SA1162S-GR,LF
{"Factory Pack Quantity":"3000","Gain Bandwidth Product fT":"80 MHz","Product Category":"Bipolar Transistors - BJT","Transistor Polarity":"PNP","DC Collector\/Base Gain hfe Min":"70","Pd - Power Dissipation":"150 mW","Packaging":"Reel","Collector- Emitter Voltage VCEO Max":"- 50 V","Emitter- Base Voltage VEBO":"- 5 V","Mounting Style":"SMD\/SMT","Package \/ Case":"SC-59","Brand":"Toshiba","RoHS":"Details","Manufacturer":"Toshiba"}...
1600 Bytes - 05:33:29, 07 May 2024
Toshiba.co.jp/2SA1162S-Y,LF
{"Factory Pack Quantity":"3000","Gain Bandwidth Product fT":"80 MHz","Product Category":"Bipolar Transistors - BJT","Transistor Polarity":"PNP","DC Collector\/Base Gain hfe Min":"70","Pd - Power Dissipation":"150 mW","Packaging":"Reel","Collector- Emitter Voltage VCEO Max":"- 50 V","Emitter- Base Voltage VEBO":"- 5 V","Mounting Style":"SMD\/SMT","Package \/ Case":"SC-59","Brand":"Toshiba","Manufacturer":"Toshiba"}...
1576 Bytes - 05:33:29, 07 May 2024
Toshiba.co.jp/2SA1162TE85L
{"Status":"ACTIVE","Package Body Material":"PLASTIC\/EPOXY","Transistor Polarity":"PNP","Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"0.1500 W","Package Style":"SMALL OUTLINE","DC Current Gain-Min (hFE)":"70","Collector Current-Max (IC)":"0.1500 A","Collector-emitter Voltage-Max":"50 V","Transistor Application":"AMPLIFIER","Transition Frequency-Nom (fT)":"80 MHz","Number of Elements":"1","Transistor Element Material":"SILICON","Terminal Position":"DUAL","Transistor Type":"GENERAL PURPOSE SMAL...
1385 Bytes - 05:33:29, 07 May 2024
Toshiba.co.jp/2SA1162TE85R
{"Status":"ACTIVE","Package Body Material":"PLASTIC\/EPOXY","Transistor Polarity":"PNP","Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"0.1500 W","Package Style":"SMALL OUTLINE","DC Current Gain-Min (hFE)":"70","Collector Current-Max (IC)":"0.1500 A","Collector-emitter Voltage-Max":"50 V","Transistor Application":"AMPLIFIER","Transition Frequency-Nom (fT)":"80 MHz","Number of Elements":"1","Transistor Element Material":"SILICON","Terminal Position":"DUAL","Transistor Type":"GENERAL PURPOSE SMAL...
1384 Bytes - 05:33:29, 07 May 2024
Toshiba.co.jp/2SA1162-Y
{"Status":"ACTIVE","Terminal Finish":"NOT SPECIFIED","Package Body Material":"PLASTIC\/EPOXY","Mfr Package Description":"2-3F1A, SC-59, TO-236MOD, 3 PIN","Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"0.1500 W","Package Style":"SMALL OUTLINE","DC Current Gain-Min (hFE)":"120","Collector Current-Max (IC)":"0.1500 A","Collector-emitter Voltage-Max":"50 V","Transistor Application":"AMPLIFIER","Transition Frequency-Nom (fT)":"80 MHz","Number of Elements":"1","Transistor Element Material":"SILICON"...
1464 Bytes - 05:33:29, 07 May 2024
Toshiba.co.jp/2SA1162-Y(F)
{"Collector Current (DC) ":"0.15 A","Transistor Polarity":"PNP","Collector-Emitter Voltage":"50 V","Rad Hardened":"No","Mounting":"Surface Mount","Emitter-Base Voltage":"5 V","Category ":"Bipolar Small Signal","Operating Temperature Classification":"Military","Power Dissipation":"0.15 W","Operating Temp Range":"-55C to 125C","Frequency":"80 MHz","Package Type":"SMini","Collector-Base Voltage":"50 V","DC Current Gain":"120","Pin Count":"3","Number of Elements":"1"}...
1494 Bytes - 05:33:29, 07 May 2024
Toshiba.co.jp/2SA1162-Y,LF
{"Emitter- Base Voltage VEBO":"5 V","Gain Bandwidth Product fT":"80 MHz","Product Category":"Bipolar Transistors - BJT","Transistor Polarity":"PNP","Minimum Operating Temperature":"- 55 C","Factory Pack Quantity":"3000","DC Collector\/Base Gain hfe Min":"70","DC Current Gain hFE Max":"400","Collector-Emitter Saturation Voltage":"0.1 V","Collector- Emitter Voltage VCEO Max":"50 V","Packaging":"Reel","Collector- Base Voltage VCBO":"50 V","Mounting Style":"SMD\/SMT","Pd - Power Dissipation":"150 mW","Package \...
1945 Bytes - 05:33:29, 07 May 2024
Toshiba.co.jp/2SA1162-Y,LF(B
{"Collector Current (DC) ":"0.15(A)","Transistor Polarity":"PNP","Operating Temperature Classification":"Military","Rad Hardened":"No","Mounting":"Surface Mount","Emitter-Base Voltage":"5(V)","Packaging":"Tape and Reel","Power Dissipation":"0.15(W)","Category ":"Bipolar Small Signal","Operating Temp Range":"-55C to 125C","Frequency":"80(MHz)","Package Type":"SMini","Collector-Base Voltage":"50(V)","DC Current Gain":"120","Output Power":"Not Required(W)","Configuration":"Single","Pin Count":"3","Number of E...
1631 Bytes - 05:33:29, 07 May 2024
Toshiba.co.jp/2SA1162-Y,LF(T
{"Collector Current (DC) ":"0.15(A)","Configuration":"Single","Transistor Polarity":"PNP","Collector-Emitter Voltage":"50(V)","Mounting":"Surface Mount","Emitter-Base Voltage":"5(V)","Category ":"Bipolar Small Signal","Packaging":"Tape and Reel","Operating Temperature Classification":"Military","Operating Temp Range":"-55C to 125C","Frequency":"80(MHz)","Package Type":"SMini","Rad Hardened":"No","DC Current Gain":"120","Output Power":"Not Required(W)","Power Dissipation":"0.15(W)","Pin Count":"3","Number of...
1659 Bytes - 05:33:29, 07 May 2024
Toshiba.co.jp/2SA1162-YTE85L
{"Status":"ACTIVE","Terminal Finish":"NOT SPECIFIED","Package Body Material":"PLASTIC\/EPOXY","Transistor Polarity":"PNP","Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"0.1500 W","Package Style":"SMALL OUTLINE","DC Current Gain-Min (hFE)":"120","Collector Current-Max (IC)":"0.1500 A","Collector-emitter Voltage-Max":"50 V","Transistor Application":"AMPLIFIER","Transition Frequency-Nom (fT)":"80 MHz","Number of Elements":"1","Transistor Element Material":"SILICON","Terminal Position":"DUAL","Tra...
1432 Bytes - 05:33:29, 07 May 2024
Toshiba.co.jp/2SA1162YTE85L
{"Status":"ACTIVE","Terminal Finish":"NOT SPECIFIED","Package Body Material":"PLASTIC\/EPOXY","Transistor Polarity":"PNP","Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"0.1500 W","Package Style":"SMALL OUTLINE","DC Current Gain-Min (hFE)":"120","Collector Current-Max (IC)":"0.1500 A","Collector-emitter Voltage-Max":"50 V","Transistor Application":"AMPLIFIER","Transition Frequency-Nom (fT)":"80 MHz","Number of Elements":"1","Transistor Element Material":"SILICON","Terminal Position":"DUAL","Tra...
1426 Bytes - 05:33:29, 07 May 2024
Toshiba.co.jp/2SA1162-Y(TE85L,F)
{"Rad Hardened":"No","Collector Current (DC) ":"0.15(A)","Transistor Polarity":"PNP","Collector-Emitter Voltage":"50(V)","Operating Temperature Classification":"Military","Mounting":"Surface Mount","Emitter-Base Voltage":"5(V)","Category ":"Bipolar Small Signal","Packaging":"Tape and Reel","Power Dissipation":"0.15(W)","Operating Temp Range":"-55C to 125C","Frequency":"80(MHz)","Package Type":"SMini","Collector-Base Voltage":"50(V)","DC Current Gain":"120","Output Power":"Not Required(W)","Configuration":"S...
1673 Bytes - 05:33:29, 07 May 2024
Toshiba.co.jp/2SA1162-Y(TE85L,F)""
{"Collector Current (DC) ":"0.15 A","Transistor Polarity":"PNP","DC Current Gain":"120","Collector-Emitter Voltage":"50 V","Mounting":"Surface Mount","Emitter-Base Voltage":"5 V","Packaging":"Tape and Reel","Category ":"Bipolar Small Signal","Operating Temperature Classification":"Military","Power Dissipation":"0.15 W","Operating Temp Range":"-55C to 125C","Frequency":"80 MHz","Package Type":"SMini","Collector-Base Voltage":"50 V","Rad Hardened":"No","Pin Count":"3","Number of Elements":"1"}...
1607 Bytes - 05:33:29, 07 May 2024
Toshiba.co.jp/2SA1162-Y(TE85L.F)
{"Collector Current (DC) ":"0.15(A)","Transistor Polarity":"PNP","Operating Temperature Classification":"Military","Mounting":"Surface Mount","Emitter-Base Voltage":"5(V)","Rad Hardened":"No","Category ":"Bipolar Small Signal","Packaging":"Tape and Reel","Power Dissipation":"0.15(W)","Operating Temp Range":"-55C to 125C","Frequency":"80(MHz)","Output Power":"Not Required(W)","Collector-Base Voltage":"50(V)","DC Current Gain":"120","Package Type":"SMini","Configuration":"Single","Pin Count":"3","Number of E...
1639 Bytes - 05:33:29, 07 May 2024
Toshiba.co.jp/2SA1162-YTE85LF
844 Bytes - 05:33:29, 07 May 2024
Toshiba.co.jp/2SA1162-YTE85R
{"Status":"ACTIVE","Terminal Finish":"NOT SPECIFIED","Package Body Material":"PLASTIC\/EPOXY","Transistor Polarity":"PNP","Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"0.1500 W","Package Style":"SMALL OUTLINE","DC Current Gain-Min (hFE)":"120","Collector Current-Max (IC)":"0.1500 A","Collector-emitter Voltage-Max":"50 V","Transistor Application":"AMPLIFIER","Transition Frequency-Nom (fT)":"80 MHz","Number of Elements":"1","Transistor Element Material":"SILICON","Terminal Position":"DUAL","Tra...
1434 Bytes - 05:33:29, 07 May 2024